NCE65T680I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE65T680I
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 11 nC
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 28 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.68 Ohm
Paquete / Cubierta: TO251
Búsqueda de reemplazo de NCE65T680I MOSFET
NCE65T680I Datasheet (PDF)
nce65t680i nce65t680k.pdf

NCE65T680INCE65T680K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri
nce65t680i.pdf

NCE65T680INCE65T680K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri
nce65t680f nce65t680 nce65t680d.pdf

NCE65T680D,NCE65T680,NCE65T680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce65t680k.pdf

NCE65T680INCE65T680K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri
Otros transistores... NCE65T540D , NCE65T540 , NCE65T540F , NCE65T540I , NCE65T540K , NCE65T680D , NCE65T680 , NCE65T680F , IRF540N , NCE65T680K , NCE65T900D , NCE65T900 , NCE65T900F , NCE65T900I , NCE65T900K , NCE65TF041T , NCE65TF068T .



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