NCE65T900F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE65T900F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 29 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3 nS

Cossⓘ - Capacitancia de salida: 25 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm

Encapsulados: TO220F

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NCE65T900F datasheet

 ..1. Size:606K  ncepower
 nce65t900 nce65t900f.pdf pdf_icon

NCE65T900F

NCE65T900D NCE65T900, NCE65T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) RDS(ON)TYP 750 m with low gate charge. This super junction MOSFET fits the ID 5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..2. Size:606K  ncepower
 nce65t900d nce65t900 nce65t900f.pdf pdf_icon

NCE65T900F

NCE65T900D NCE65T900, NCE65T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) RDS(ON)TYP 750 m with low gate charge. This super junction MOSFET fits the ID 5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..3. Size:606K  ncepower
 nce65t900f.pdf pdf_icon

NCE65T900F

NCE65T900D NCE65T900, NCE65T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) RDS(ON)TYP 750 m with low gate charge. This super junction MOSFET fits the ID 5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.1. Size:1403K  ncepower
 nce65t900k.pdf pdf_icon

NCE65T900F

NCE65T900I NCE65T900K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 750 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial pow

MOSTRAR MÁS

Otros transistores... NCE65T540K, NCE65T680D, NCE65T680, NCE65T680F, NCE65T680I, NCE65T680K, NCE65T900D, NCE65T900, IRF640, NCE65T900I, NCE65T900K, NCE65TF041T, NCE65TF068T, NCE65TF099D, NCE65TF099, NCE65TF099F, NCE65TF099T