NCE65TF099 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE65TF099
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 322 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 38 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 97 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.109 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de NCE65TF099 MOSFET
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NCE65TF099 datasheet
nce65tf099.pdf
NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 38 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu
nce65tf099d nce65tf099 nce65tf099f.pdf
NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 38 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, a
nce65tf099f nce65tf099 nce65tf099d.pdf
NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 38 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu
nce65tf099d.pdf
NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 38 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu
Otros transistores... NCE65T900D, NCE65T900, NCE65T900F, NCE65T900I, NCE65T900K, NCE65TF041T, NCE65TF068T, NCE65TF099D, AO3400, NCE65TF099F, NCE65TF099T, NCE65TF130D, NCE65TF130, NCE65TF130F, NCE65TF180D, NCE65TF180, NCE65TF180F
History: CSD17578Q5A
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