NCE65TF099F Todos los transistores

 

NCE65TF099F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE65TF099F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 38 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 45 nC
   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 97 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.109 Ohm
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

NCE65TF099F Datasheet (PDF)

 ..1. Size:578K  ncepower
nce65tf099d nce65tf099 nce65tf099f.pdf pdf_icon

NCE65TF099F

NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 38 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, a

 ..2. Size:1480K  ncepower
nce65tf099f nce65tf099 nce65tf099d.pdf pdf_icon

NCE65TF099F

NCE65TF099D,NCE65TF099,NCE65TF099FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 89 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 38 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu

 ..3. Size:1480K  ncepower
nce65tf099f.pdf pdf_icon

NCE65TF099F

NCE65TF099D,NCE65TF099,NCE65TF099FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 89 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 38 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu

 4.1. Size:1480K  ncepower
nce65tf099.pdf pdf_icon

NCE65TF099F

NCE65TF099D,NCE65TF099,NCE65TF099FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 89 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 38 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu

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