NCE65TF099F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE65TF099F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 36 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 38 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 45 nC
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 97 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.109 Ohm
Paquete / Cubierta: TO220F
- Selección de transistores por parámetros
NCE65TF099F Datasheet (PDF)
nce65tf099d nce65tf099 nce65tf099f.pdf

NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 38 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, a
nce65tf099f nce65tf099 nce65tf099d.pdf

NCE65TF099D,NCE65TF099,NCE65TF099FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 89 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 38 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu
nce65tf099f.pdf

NCE65TF099D,NCE65TF099,NCE65TF099FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 89 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 38 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu
nce65tf099.pdf

NCE65TF099D,NCE65TF099,NCE65TF099FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 89 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 38 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .



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