NCE65TF130D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE65TF130D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 260 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 28 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 120 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de NCE65TF130D MOSFET
- Selecciónⓘ de transistores por parámetros
NCE65TF130D datasheet
nce65tf130d.pdf
NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 120 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 28 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ind
nce65tf130f nce65tf130 nce65tf130d.pdf
NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 120 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 28 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ind
nce65tf130d nce65tf130 nce65tf130f.pdf
NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 28 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion,
nce65tf130t.pdf
NCE65TF130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 28 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap
Otros transistores... NCE65T900I, NCE65T900K, NCE65TF041T, NCE65TF068T, NCE65TF099D, NCE65TF099, NCE65TF099F, NCE65TF099T, 10N60, NCE65TF130, NCE65TF130F, NCE65TF180D, NCE65TF180, NCE65TF180F, NCE65TF180T, NCE65TF360D, NCE65TF360
History: HM2333
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: FTF30P35D | FTF25N35DHVT | FTF15N35D | FTE15C35G | FTP02P15G | FTE02P15G | AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1
Popular searches
p0903bdg datasheet | 2sa722 | f1010e mosfet datasheet | 2sa566 | bc559 equivalent | c2075 transistor | ecg123 | 2n5551 transistor equivalent
