NCE65TF180F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE65TF180F  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 33.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 21 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 83 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.199 Ohm

Encapsulados: TO220F

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NCE65TF180F datasheet

 ..1. Size:1721K  ncepower
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NCE65TF180F

NCE65TF180D,NCE65TF180,NCE65TF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 180 m DS(ON) typ. with low gate charge. This super junction MOSFET fits the I 21 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and i

 ..2. Size:620K  ncepower
 nce65tf180f nce65tf180 nce65tf180d.pdf pdf_icon

NCE65TF180F

NCE65TF180D,NCE65TF180,NCE65TF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion,

 ..3. Size:618K  ncepower
 nce65tf180d nce65tf180 nce65tf180f.pdf pdf_icon

NCE65TF180F

NCE65TF180D,NCE65TF180,NCE65TF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 160 m DS(ON) typ. with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion

 4.1. Size:417K  ncepower
 nce65tf180t.pdf pdf_icon

NCE65TF180F

NCE65TF180T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 160 m DS(ON) with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power appl

MOSTRAR MÁS

Otros transistores... NCE65TF099, NCE65TF099F, NCE65TF099T, NCE65TF130D, NCE65TF130, NCE65TF130F, NCE65TF180D, NCE65TF180, IRF9540, NCE65TF180T, NCE65TF360D, NCE65TF360, NCE65TF360F, NCE6802, NCE6890, NCE6890K, NCE6990