NCE65TF180T Todos los transistores

 

NCE65TF180T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE65TF180T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 188 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 21 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 36 nC
   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 83 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.199 Ohm
   Paquete / Cubierta: TO247

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NCE65TF180T Datasheet (PDF)

 ..1. Size:417K  ncepower
nce65tf180t.pdf

NCE65TF180T NCE65TF180T

NCE65TF180T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 160 m DS(ON) with low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power appl

 4.1. Size:1721K  ncepower
nce65tf180f.pdf

NCE65TF180T NCE65TF180T

NCE65TF180D,NCE65TF180,NCE65TF180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON) typ.with low gate charge. This super junction MOSFET fits theI 21 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and i

 4.2. Size:620K  ncepower
nce65tf180f nce65tf180 nce65tf180d.pdf

NCE65TF180T NCE65TF180T

NCE65TF180D,NCE65TF180,NCE65TF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAXwith low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion,

 4.3. Size:1721K  ncepower
nce65tf180d.pdf

NCE65TF180T NCE65TF180T

NCE65TF180D,NCE65TF180,NCE65TF180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON) typ.with low gate charge. This super junction MOSFET fits theI 21 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and i

 4.4. Size:618K  ncepower
nce65tf180d nce65tf180 nce65tf180f.pdf

NCE65TF180T NCE65TF180T

NCE65TF180D,NCE65TF180,NCE65TF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 160 m DS(ON) typ.with low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion

 4.5. Size:1721K  ncepower
nce65tf180.pdf

NCE65TF180T NCE65TF180T

NCE65TF180D,NCE65TF180,NCE65TF180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON) typ.with low gate charge. This super junction MOSFET fits theI 21 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and i

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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