FDD10N20LZ Todos los transistores

 

FDD10N20LZ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDD10N20LZ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 56 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm
   Paquete / Cubierta: TO252 DPAK
 

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FDD10N20LZ PDF Specs

 ..1. Size:230K  fairchild semi
fdd10n20lz fdd10n20lztm.pdf pdf_icon

FDD10N20LZ

December 2010 TM UniFET FDD10N20LZ N-Channel MOSFET 200V Logic, 7.6A, 0.36 Features Description RDS(on) = 0.30 ( Typ.) @ VGS = 10V, ID = 3.8A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS Low Gate Charge ( Typ.12nC) technology. Low Crss ( Typ.11pF) This advance technology h... See More ⇒

 ..2. Size:716K  onsemi
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FDD10N20LZ

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 ..3. Size:315K  inchange semiconductor
fdd10n20lz.pdf pdf_icon

FDD10N20LZ

isc N-Channel MOSFET Transistor FDD10N20LZ FEATURES Drain Current I =7.6A@ T =25 D C Drain Source Voltage V =200V(Min) DSS Static Drain-Source On-Resistance R =0.36 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒

 9.1. Size:222K  fairchild semi
fdd107an06la0.pdf pdf_icon

FDD10N20LZ

January 2004 FDD107AN06LA0 N-Channel PowerTrench MOSFET 60V, 10A, 107m Features Applications rDS(ON) = 92m (Typ.), VGS = 5V, ID = 10A Motor / Body Load Control Qg(tot) = 4.2nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC c... See More ⇒

Otros transistores... FDC8601 , STU10N25 , FDC8602 , STU10N20 , FDC86244 , FDD050N03B , STU10N10 , FDD10AN06A0 , 13N50 , STU10L01 , FDD120AN15A0 , FDD13AN06A0 , FDD13AN06A0F085 , FDD14AN06LA0F085 , FDD16AN08A0 , FDD16AN08A0F085 , FDD18N20LZ .

 

 
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