FDD10N20LZ Todos los transistores

 

FDD10N20LZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD10N20LZ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 56 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 4.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 12 nC

Resistencia drenaje-fuente RDS(on): 0.36 Ohm

Empaquetado / Estuche: TO252, DPAK

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FDD10N20LZ Datasheet (PDF)

1.1. fdd10n20lz fdd10n20lztm.pdf Size:230K _fairchild_semi

FDD10N20LZ
FDD10N20LZ

December 2010 TM UniFET FDD10N20LZ N-Channel MOSFET 200V Logic, 7.6A, 0.36 Features Description • RDS(on) = 0.30( Typ.) @ VGS = 10V, ID = 3.8A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS • Low Gate Charge ( Typ.12nC) technology. • Low Crss ( Typ.11pF) This advance technology h

5.1. fdd10an06 f085.pdf Size:384K _fairchild_semi

FDD10N20LZ
FDD10N20LZ

Dec 2012 FDD10AN06A0_F085 N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ Features Applications • rDS(ON) = 9.4mΩ (Typ.), VGS = 10V, ID = 50A • Motor / Body Load Control • Qg(tot) = 28nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management • Low Qrr Body Diode • Injection Systems • UIS Capability (Single Pulse and Repetitive Pulse) • DC-DC

5.2. fdd107an06la0.pdf Size:222K _fairchild_semi

FDD10N20LZ
FDD10N20LZ

January 2004 FDD107AN06LA0 N-Channel PowerTrench® MOSFET 60V, 10A, 107mΩ Features Applications • rDS(ON) = 92mΩ (Typ.), VGS = 5V, ID = 10A • Motor / Body Load Control • Qg(tot) = 4.2nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management • Low QRR Body Diode • Injection Systems • UIS Capability (Single Pulse and Repetitive Pulse) • DC-DC c

 5.3. fdd10an06a0.pdf Size:236K _fairchild_semi

FDD10N20LZ
FDD10N20LZ

August 2002 FDD10AN06A0 N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ Features Applications • rDS(ON) = 9.4mΩ (Typ.), VGS = 10V, ID = 50A • Motor / Body Load Control • Qg(tot) = 28nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management • Low Qrr Body Diode • Injection Systems • UIS Capability (Single Pulse and Repetitive Pulse) • DC-DC c

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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