NCE6890 Todos los transistores

 

NCE6890 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE6890

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 130 W

Tensión drenaje-fuente |Vds|: 68 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 90 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 35 nC

Tiempo de elevación (tr): 94 nS

Conductancia de drenaje-sustrato (Cd): 450 pF

Resistencia drenaje-fuente RDS(on): 0.0075 Ohm

Empaquetado / Estuche: TO220

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NCE6890 Datasheet (PDF)

..1. nce6890.pdf Size:338K _ncepower

NCE6890
NCE6890

NCE6890http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A RDS(ON)

0.1. nce6890k.pdf Size:420K _ncepower

NCE6890
NCE6890

http://www.ncepower.com NCE6890KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A Schematic diagram RDS(ON)

9.1. nce6802.pdf Size:326K _ncepower

NCE6890
NCE6890

http://www.ncepower.com NCE6802NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = 30V,ID = 3.5A RDS(ON)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF2807 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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