NCE6890 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE6890
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 130 W
Tensión drenaje-fuente |Vds|: 68 V
Tensión compuerta-fuente |Vgs|: 20 V
Corriente continua de drenaje |Id|: 90 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente |Vgs(th)|: 4 V
Carga de compuerta (Qg): 35 nC
Tiempo de elevación (tr): 94 nS
Conductancia de drenaje-sustrato (Cd): 450 pF
Resistencia drenaje-fuente RDS(on): 0.0075 Ohm
Empaquetado / Estuche: TO220
Búsqueda de reemplazo de MOSFET NCE6890
NCE6890 Datasheet (PDF)
..1. nce6890.pdf 
Size:338K _ncepower
NCE6890http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A RDS(ON)
0.1. nce6890k.pdf Size:420K _ncepower
http://www.ncepower.com NCE6890KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A Schematic diagram RDS(ON)
9.1. nce6802.pdf Size:326K _ncepower
http://www.ncepower.com NCE6802NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = 30V,ID = 3.5A RDS(ON)
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