NCE70T1K2I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE70T1K2I

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 41 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 17 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.3 Ohm

Encapsulados: TO251

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NCE70T1K2I datasheet

 ..1. Size:476K  ncepower
 nce70t1k2i nce70t1k2k.pdf pdf_icon

NCE70T1K2I

NCE70T1K2K,NCE70T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 1100 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 4 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 ..2. Size:476K  ncepower
 nce70t1k2i.pdf pdf_icon

NCE70T1K2I

NCE70T1K2K,NCE70T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 1100 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 4 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 ..3. Size:476K  ncepower
 nce70t1k2k nce70t1k2i.pdf pdf_icon

NCE70T1K2I

NCE70T1K2K,NCE70T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 1100 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 4 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 5.1. Size:594K  ncepower
 nce70t1k2f.pdf pdf_icon

NCE70T1K2I

NCE70T1K2,NCE70T1K2D,NCE70T1K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 1100 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 4 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, an

MOSTRAR MÁS

Otros transistores... NCE6890, NCE6890K, NCE6990, NCE6990D, NCE70T180D, NCE70T180, NCE70T180F, NCE70T1K2K, IRFP260, NCE70T1K2R, NCE70T260D, NCE70T260, NCE70T260F, NCE70T360D, NCE70T360, NCE70T360F, NCE70T360K