NCE70T360K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE70T360K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 101 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 11.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 54 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.39 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de NCE70T360K MOSFET
- Selecciónⓘ de transistores por parámetros
NCE70T360K datasheet
nce70t360k nce70t360i.pdf
NCE70T360K,NCE70T360I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11.5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indust
nce70t360i nce70t360k.pdf
NCE70T360K,NCE70T360I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 11.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial pow
nce70t360k.pdf
NCE70T360K,NCE70T360I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 11.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial pow
nce70t360i.pdf
NCE70T360K,NCE70T360I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 11.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial pow
Otros transistores... NCE70T1K2I, NCE70T1K2R, NCE70T260D, NCE70T260, NCE70T260F, NCE70T360D, NCE70T360, NCE70T360F, 5N65, NCE70T360I, NCE70T540I, NCE70T540K, NCE70T680D, NCE70T680, NCE70T680F, NCE70T900D, NCE70T900
History: IPB80N06S2-09 | SSG4842N | CS4N70U
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