NCE80T420 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE80T420
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 188 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 7 nS
Cossⓘ - Capacitancia de salida: 95 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.42 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de NCE80T420 MOSFET
- Selecciónⓘ de transistores por parámetros
NCE80T420 datasheet
..1. Size:532K ncepower
nce80t420.pdf 
NCE80T420,NCE80T420F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 420 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the ID 11 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria
..2. Size:532K ncepower
nce80t420 nce80t420f.pdf
NCE80T420,NCE80T420F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 420 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the ID 11 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria
0.1. Size:532K ncepower
nce80t420f.pdf
NCE80T420,NCE80T420F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 420 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the ID 11 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria
8.1. Size:661K 1
nce80td65bp nce80td65bt.pdf
PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
8.2. Size:613K ncepower
nce80t560d nce80t560 nce80t560f.pdf
NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 9 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and
8.3. Size:1464K ncepower
nce80td60bt.pdf
Pb Free Product NCE80TD60BT 600V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
8.4. Size:610K ncepower
nce80t320d.pdf
NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 17 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and
8.5. Size:610K ncepower
nce80t320f.pdf
NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 17 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and
8.6. Size:1542K ncepower
nce80td65bp.pdf
Pb Free Product NCE80TD65BP 650V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
8.7. Size:613K ncepower
nce80t560f nce80t560 nce80t560d.pdf
NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 9 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and
8.8. Size:610K ncepower
nce80t320d nce80t320 nce80t320f.pdf
NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 17 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and
8.9. Size:660K ncepower
nce80td60bp nce80td60bt.pdf
PbFreeProduct NCE80TD60BP,NCE80TD60BT 600V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat H
8.10. Size:610K ncepower
nce80t320.pdf
NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 17 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and
8.11. Size:661K ncepower
nce80td65bp nce80td65bt.pdf
PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
8.12. Size:613K ncepower
nce80t560d.pdf
NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 9 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and
8.13. Size:610K ncepower
nce80t320f nce80t320 nce80t320d.pdf
NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 17 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and
8.14. Size:613K ncepower
nce80t560f.pdf
NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 9 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and
8.15. Size:1449K ncepower
nce80tc65bt.pdf
Pb Free Product NCE80TC65BT 650V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
8.17. Size:605K ncepower
nce80t900d nce80t900 nce80t900f.pdf
NCE80T900D,NCE80T900,NCE80T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 900 m DS(ON)MAX with low gate charge. This super junction MOSFET fits the ID 6 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and
8.18. Size:613K ncepower
nce80t560.pdf
NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DS junction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 9 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and
8.19. Size:1655K ncepower
nce80td65bt.pdf
Pb Free Product NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
8.20. Size:1423K ncepower
nce80td60bp.pdf
Pb Free Product NCE80TD60BP 600V, 80A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching
Otros transistores... NCE7560K, NCE80H12, NCE80H12D, NCE80H15, NCE80H16, NCE80T320D, NCE80T320, NCE80T320F, AO3407, NCE80T420F, NCE80T560D, NCE80T560, NCE80T560F, NCE80T900D, NCE80T900, NCE80T900F, NCE8205
