NCE80T560 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE80T560
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 131 W
Voltaje máximo drenador - fuente |Vds|: 800 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 9 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 25 nC
Tiempo de subida (tr): 11 nS
Conductancia de drenaje-sustrato (Cd): 75 pF
Resistencia entre drenaje y fuente RDS(on): 0.56 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET NCE80T560
NCE80T560 Datasheet (PDF)
nce80t560d nce80t560 nce80t560f.pdf
NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 9 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce80t560f nce80t560 nce80t560d.pdf
NCE80T560D,NCE80T560,NCE80T560F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 480 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 9 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce80td65bp nce80td65bt.pdf
PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
nce80t320d nce80t320 nce80t320f.pdf
NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 17 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce80td60bp nce80td60bt.pdf
PbFreeProduct NCE80TD60BP,NCE80TD60BT 600V, 80A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat H
nce80t420 nce80t420f.pdf
NCE80T420,NCE80T420F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 420 m DS(ON) MAXwith low gate charge. This super junction MOSFET fits the ID 11 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria
nce80td65bp nce80td65bt.pdf
PbFreeProduct NCE80TD65BP,NCE80TD65BT 650V, 80A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat
nce80t320f nce80t320 nce80t320d.pdf
NCE80T320D,NCE80T320,NCE80T320F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 17 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce80t900d nce80t900 nce80t900f.pdf
NCE80T900D,NCE80T900,NCE80T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 800 V DSjunction technology and design to provide excellent RDS(ON) R 900 m DS(ON)MAX with low gate charge. This super junction MOSFET fits the ID 6 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: SM8A03NSF
