NCE8205A Todos los transistores

 

NCE8205A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE8205A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 330 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm
   Paquete / Cubierta: TSSOP8
 

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NCE8205A Datasheet (PDF)

 ..1. Size:403K  ncepower
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NCE8205A

Pb Free Producthttp://www.ncepower.com NCE8205ANCE N-Channel Enhancement Mode Power MOSFET D1D2Description The NCE8205A uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram Gener

 7.1. Size:339K  ncepower
nce8205b.pdf pdf_icon

NCE8205A

Pb Free Producthttp://www.ncepower.com NCE8205BNCE N-Channel Enhancement Mode Power MOSFET Description D1D2The NCE8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram Gen

 7.2. Size:299K  ncepower
nce8205t.pdf pdf_icon

NCE8205A

Pb Free Producthttp://www.ncepower.com NCE8205tNCE N-Channel Enhancement Mode Power MOSFET D1D2Description G1 G2The NCE8205t uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2voltages as low as 2.5V. This device is suitable for use as a Schematic diagram Battery protection or in other Switching application. Gen

 7.3. Size:443K  ncepower
nce8205.pdf pdf_icon

NCE8205A

Pb Free Producthttp://www.ncepower.com NCE8205NCE N-Channel Enhancement Mode Power MOSFET D1D2Description The NCE8205 uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram Gener

Otros transistores... NCE80T420F , NCE80T560D , NCE80T560 , NCE80T560F , NCE80T900D , NCE80T900 , NCE80T900F , NCE8205 , AO3401 , NCE8205I , NCE8205t , NCE8290AC , NCE8295A , NCE8295AD , NCE8295AK , NCE82H110 , NCE82H110D .

History: AM20N06-90I | AM90P03-02P | NTMFD4C20N | 2SK947 | 2SK241 | SRC65R1K3ES | RHU003N03

 

 
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