NCE8205A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE8205A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 330 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm
Paquete / Cubierta: TSSOP8
Búsqueda de reemplazo de NCE8205A MOSFET
NCE8205A Datasheet (PDF)
nce8205a.pdf

Pb Free Producthttp://www.ncepower.com NCE8205ANCE N-Channel Enhancement Mode Power MOSFET D1D2Description The NCE8205A uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram Gener
nce8205b.pdf

Pb Free Producthttp://www.ncepower.com NCE8205BNCE N-Channel Enhancement Mode Power MOSFET Description D1D2The NCE8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram Gen
nce8205t.pdf

Pb Free Producthttp://www.ncepower.com NCE8205tNCE N-Channel Enhancement Mode Power MOSFET D1D2Description G1 G2The NCE8205t uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2voltages as low as 2.5V. This device is suitable for use as a Schematic diagram Battery protection or in other Switching application. Gen
nce8205.pdf

Pb Free Producthttp://www.ncepower.com NCE8205NCE N-Channel Enhancement Mode Power MOSFET D1D2Description The NCE8205 uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram Gener
Otros transistores... NCE80T420F , NCE80T560D , NCE80T560 , NCE80T560F , NCE80T900D , NCE80T900 , NCE80T900F , NCE8205 , AO3401 , NCE8205I , NCE8205t , NCE8290AC , NCE8295A , NCE8295AD , NCE8295AK , NCE82H110 , NCE82H110D .
History: AM20N06-90I | AM90P03-02P | NTMFD4C20N | 2SK947 | 2SK241 | SRC65R1K3ES | RHU003N03
History: AM20N06-90I | AM90P03-02P | NTMFD4C20N | 2SK947 | 2SK241 | SRC65R1K3ES | RHU003N03



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