2SK2482 Todos los transistores

 ..1. Size:66K  nec
 2sk2482.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2482 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2482 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high voltage switching applications. FEATURES 4.7 MAX. 15.7 MAX. 3.2 0.2 1.5 Low On-Resistance RDS (on) = 4.0 (VGS = 10 V, ID = 3.0 A) 4 Low Ciss Ciss = 900 pF

 8.1. Size:117K  1
 2sk2480.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2480 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2480 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high voltage switching applications. FEATURES 10.0 0.3 4.5 0.2 3.2 0.2 Low On-Resistance 2.7 0.2 RDS (on) = 4.0 (VGS = 10 V, ID = 2.0 A) Low Ciss Ciss = 90

 8.2. Size:118K  nec
 2sk2485.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2485 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2485 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high voltage switching applications. 4.7 MAX. FEATURES 15.7 MAX. 3.2 0.2 1.5 Low On-Resistance 4 RDS (on) = 2.8 (VGS = 10 V, ID = 3.0 A) Low Ciss Ciss = 1 20

 8.3. Size:115K  nec
 2sk2484.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2484 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2484 is N-Channel MOS Field Effect Transistor de- (in millimeters) signed for high voltage switching applications. 10.6 MAX. 4.8 MAX. FEATURES 3.6 0.2 1.3 0.2 Low On-Resistance 10.0 RDS(on) = 2.8 (VGS = 10 V, ID = 3.0 A) Low Ci

 8.4. Size:117K  nec
 2sk2480.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2480 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2480 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high voltage switching applications. FEATURES 10.0 0.3 4.5 0.2 3.2 0.2 Low On-Resistance 2.7 0.2 RDS (on) = 4.0 (VGS = 10 V, ID = 2.0 A) Low Ciss Ciss = 90

 8.5. Size:117K  nec
 2sk2486.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2486 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2486 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high voltage switching applications. FEATURES 4.7 MAX. 15.7 MAX. 3.2 0.2 1.5 Low On-Resistance 4 RDS (on) = 2.0 (VGS = 10 V, ID = 4.0 A) Low Ciss Ciss = 1 830

 8.6. Size:86K  nec
 2sk2483.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2483 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2483 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high voltage switching applications. FEATURES 10.0 0.3 4.5 0.2 3.2 0.2 Low On-Resistance 2.7 0.2 RDS (on) = 2.8 (VGS = 10 V, ID = 2.0 A) Low Ciss Ciss = 1

 8.7. Size:118K  nec
 2sk2487.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2487 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2487 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high voltage switching applications. FEATURES 4.7 MAX. 15.7 MAX. 3.2 0.2 1.5 Low On-Resistance 4 RDS (on) = 1.6 (VGS = 10 V, ID = 4.0 A) Low Ciss Ciss = 2 100

 8.8. Size:117K  nec
 2sk2481.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2481 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2481 is N-Channel MOS Field Effect Transistor de- (in millimeters) signed for high voltage switching applications. 10.6 MAX. 4.8 MAX. FEATURES 3.6 0.2 1.3 0.2 10.0 Low On-Resistance RDS(on) = 4.0 (VGS = 10 V, ID = 2.0 A) Low Cis

 8.9. Size:118K  nec
 2sk2488.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2488 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2488 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high voltage switching applications. FEATURES 4.7 MAX. 15.7 MAX. 3.2 0.2 Low On-Resistance 1.5 RDS (on) = 1.2 (VGS = 10 V, ID = 5.0 A) 4 Low Ciss Ciss = 2 90

 8.10. Size:405K  shindengen
 2sk2489.pdf

SHINDENGEN VZ Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2489 Case STO-220 (Unit mm) ( F10S18VZ ) 180V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION DC/DC converters Power supplies of DC 12-24V input Pr

 8.11. Size:209K  inchange semiconductor
 2sk2485.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK2485 FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER