NCEP01T12 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP01T12
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 185 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 129 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 67 nS
Cossⓘ - Capacitancia de salida: 641 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de NCEP01T12 MOSFET
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NCEP01T12 datasheet
..1. Size:347K ncepower
ncep01t12.pdf 
Pb Free Product http //www.ncepower.com NCEP01T12 NCE N-Channel Super Trench Power MOSFET Description The NCEP01T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
0.1. Size:325K ncepower
ncep01t12d.pdf
http //www.ncepower.com NCEP01T12D NCE N-Channel Super Trench Power MOSFET Description The NCEP01T12D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
6.1. Size:348K ncepower
ncep01t13.pdf
Pb Free Product http //www.ncepower.com NCEP01T13 NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
6.2. Size:283K ncepower
ncep01t11d.pdf
Pb Free Product http //www.ncepower.com NCEP01T11D NCE N-Channel Super Trench Power MOSFET Description The NCEP01T11D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
6.3. Size:321K ncepower
ncep01t13ad.pdf
Pb Free Product http //www.ncepower.com NCEP01T13AD NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
6.4. Size:340K ncepower
ncep01t10g.pdf
http //www.ncepower.com NCEP01T10G NCE N-Channel Super Trench Power MOSFET Description The NCEP01T10G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
6.5. Size:323K ncepower
ncep01t18d.pdf
Pb Free Product http //www.ncepower.com NCEP01T18D NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
6.6. Size:317K ncepower
ncep01t11.pdf
Pb Free Product http //www.ncepower.com NCEP01T11 NCE N-Channel Super Trench Power MOSFET Description The NCEP01T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
6.7. Size:343K ncepower
ncep01t13a.pdf
Pb Free Product http //www.ncepower.com NCEP01T13A NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
6.8. Size:345K ncepower
ncep01t18.pdf
Pb Free Product http //www.ncepower.com NCEP01T18 NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
6.9. Size:323K ncepower
ncep01t13bd.pdf
Pb Free Product http //www.ncepower.com NCEP01T13BD NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13BD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
6.10. Size:343K ncepower
ncep01t13b.pdf
Pb Free Product http //www.ncepower.com NCEP01T13B NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13B uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
6.11. Size:345K ncepower
ncep01t15.pdf
Pb Free Product http //www.ncepower.com NCEP01T15 NCE N-Channel Super Trench Power MOSFET Description The NCEP01T15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
6.12. Size:317K ncepower
ncep01t13d.pdf
Pb Free Product http //www.ncepower.com NCEP01T13D NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
6.13. Size:396K ncepower
ncep01t18vd.pdf
http //www.ncepower.com NCEP01T18VD NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18VD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
6.14. Size:363K ncepower
ncep01t13ll.pdf
http //www.ncepower.com NCEP01T13LL NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13LL uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =100V,ID =160A frequency switching performance. Both conduction and RDS(ON)=3.3m , typical@ VGS=10V switching power losses are minimized due to an extremely l
6.15. Size:323K ncepower
ncep01t18t.pdf
Pb Free Product http //www.ncepower.com NCEP01T18T NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
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