NCEP01T13A Todos los transistores

 

NCEP01T13A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP01T13A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 210 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 143 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
   Carga de la puerta (Qg): 92 nC
   Tiempo de subida (tr): 76 nS
   Conductancia de drenaje-sustrato (Cd): 731 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0046 Ohm
   Paquete / Cubierta: TO220

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NCEP01T13A Datasheet (PDF)

 ..1. Size:343K  ncepower
ncep01t13a.pdf

NCEP01T13A NCEP01T13A

Pb Free Producthttp://www.ncepower.com NCEP01T13ANCE N-Channel Super Trench Power MOSFET Description The NCEP01T13A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 0.1. Size:321K  ncepower
ncep01t13ad.pdf

NCEP01T13A NCEP01T13A

Pb Free Producthttp://www.ncepower.com NCEP01T13ADNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 5.1. Size:348K  ncepower
ncep01t13.pdf

NCEP01T13A NCEP01T13A

Pb Free Producthttp://www.ncepower.com NCEP01T13NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 5.2. Size:323K  ncepower
ncep01t13bd.pdf

NCEP01T13A NCEP01T13A

Pb Free Producthttp://www.ncepower.com NCEP01T13BDNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13BD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 5.3. Size:343K  ncepower
ncep01t13b.pdf

NCEP01T13A NCEP01T13A

Pb Free Producthttp://www.ncepower.com NCEP01T13BNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13B uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 5.4. Size:317K  ncepower
ncep01t13d.pdf

NCEP01T13A NCEP01T13A

Pb Free Producthttp://www.ncepower.com NCEP01T13DNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 5.5. Size:363K  ncepower
ncep01t13ll.pdf

NCEP01T13A NCEP01T13A

http://www.ncepower.com NCEP01T13LLNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13LL uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =100V,ID =160A frequency switching performance. Both conduction and RDS(ON)=3.3m , typical@ VGS=10V switching power losses are minimized due to an extremely l

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