NCEP01T13AD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP01T13AD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 210 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 143 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 76 nS
Cossⓘ - Capacitancia de salida: 731 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de NCEP01T13AD MOSFET
NCEP01T13AD Datasheet (PDF)
ncep01t13ad.pdf
Pb Free Producthttp://www.ncepower.com NCEP01T13ADNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep01t13a.pdf
Pb Free Producthttp://www.ncepower.com NCEP01T13ANCE N-Channel Super Trench Power MOSFET Description The NCEP01T13A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep01t13.pdf
Pb Free Producthttp://www.ncepower.com NCEP01T13NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep01t13bd.pdf
Pb Free Producthttp://www.ncepower.com NCEP01T13BDNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13BD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
Otros transistores... NCEP0178AF , NCEP0178AK , NCEP018N85LL , NCEP01ND35AG , NCEP01T11 , NCEP01T12 , NCEP01T13 , NCEP01T13A , IRFZ44 , NCEP01T13D , NCEP01T15 , NCEP01T18 , NCEP01T18T , NCEP020N30GU , NCEP023N10 , NCEP023N10D , NCEP023N10LL .
History: BUK6607-55C | NTMFS5C609NL | NTMFS5C628N | AP6679GJ-HF | TSM9428DCS | AP65WN470I | 2SK3556-01L
History: BUK6607-55C | NTMFS5C609NL | NTMFS5C628N | AP6679GJ-HF | TSM9428DCS | AP65WN470I | 2SK3556-01L
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