NCEP01T13D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP01T13D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 220 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 150 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 78 nS
Cossⓘ - Capacitancia de salida: 755 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de NCEP01T13D MOSFET
- Selecciónⓘ de transistores por parámetros
NCEP01T13D datasheet
ncep01t13d.pdf
Pb Free Product http //www.ncepower.com NCEP01T13D NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep01t13.pdf
Pb Free Product http //www.ncepower.com NCEP01T13 NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep01t13ad.pdf
Pb Free Product http //www.ncepower.com NCEP01T13AD NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep01t13a.pdf
Pb Free Product http //www.ncepower.com NCEP01T13A NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
Otros transistores... NCEP0178AK , NCEP018N85LL , NCEP01ND35AG , NCEP01T11 , NCEP01T12 , NCEP01T13 , NCEP01T13A , NCEP01T13AD , IRF640 , NCEP01T15 , NCEP01T18 , NCEP01T18T , NCEP020N30GU , NCEP023N10 , NCEP023N10D , NCEP023N10LL , NCEP023N85 .
History: MDD3752ARH
History: MDD3752ARH
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