NCEP01T18 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP01T18
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 180 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 75 nS
Cossⓘ - Capacitancia de salida: 2480 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de NCEP01T18 MOSFET
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NCEP01T18 datasheet
ncep01t18.pdf
Pb Free Product http //www.ncepower.com NCEP01T18 NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep01t18d.pdf
Pb Free Product http //www.ncepower.com NCEP01T18D NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep01t18vd.pdf
http //www.ncepower.com NCEP01T18VD NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18VD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep01t18t.pdf
Pb Free Product http //www.ncepower.com NCEP01T18T NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
Otros transistores... NCEP01ND35AG , NCEP01T11 , NCEP01T12 , NCEP01T13 , NCEP01T13A , NCEP01T13AD , NCEP01T13D , NCEP01T15 , IRLZ44N , NCEP01T18T , NCEP020N30GU , NCEP023N10 , NCEP023N10D , NCEP023N10LL , NCEP023N85 , NCEP023N85D , NCEP02515K .
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