NCEP023N10D Todos los transistores

 

NCEP023N10D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP023N10D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 340 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 240 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 252 nC
   trⓘ - Tiempo de subida: 29 nS
   Cossⓘ - Capacitancia de salida: 1500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0021 Ohm
   Paquete / Cubierta: TO263

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NCEP023N10D Datasheet (PDF)

 ..1. Size:855K  ncepower
ncep023n10d.pdf

NCEP023N10D
NCEP023N10D

NCEP023N10, NCEP023N10DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =240ADS Dswitching performance. Both conduction and switching power R =2.1m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 ..2. Size:635K  ncepower
ncep023n10 ncep023n10d.pdf

NCEP023N10D
NCEP023N10D

NCEP023N10, NCEP023N10DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =240A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 4.1. Size:2030K  ncepower
ncep023n10t.pdf

NCEP023N10D
NCEP023N10D

NCEP023N10TNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =280ADS Dswitching performance. Both conduction and switching power R =1.85m , typical@ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati

 4.2. Size:409K  ncepower
ncep023n10ll.pdf

NCEP023N10D
NCEP023N10D

NCEP023N10LLNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.7m , typical@ VGS=10V losses are minimized due to an extremely low combinat

 4.3. Size:855K  ncepower
ncep023n10.pdf

NCEP023N10D
NCEP023N10D

NCEP023N10, NCEP023N10DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =240ADS Dswitching performance. Both conduction and switching power R =2.1m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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History: NCEP01T11D

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