NCEP040N85 Todos los transistores

 

NCEP040N85 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP040N85
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 140 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 850 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de MOSFET NCEP040N85

 

NCEP040N85 Datasheet (PDF)

 ..1. Size:699K  ncepower
ncep040n85.pdf

NCEP040N85
NCEP040N85

NCEP040N85, NCEP040N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =140ADS Dswitching performance. Both conduction and switching power R =3.5m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an extr

 ..2. Size:325K  ncepower
ncep040n85 ncep040n85d.pdf

NCEP040N85
NCEP040N85

NCEP040N85, NCEP040N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =140A switching performance. Both conduction and switching power RDS(ON)=3.5m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 0.1. Size:1002K  ncepower
ncep040n85m.pdf

NCEP040N85
NCEP040N85

Pb Free ProductNCEP040N85M NCEP040N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =140ADS Dswitching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimi

 0.2. Size:1002K  ncepower
ncep040n85md.pdf

NCEP040N85
NCEP040N85

Pb Free ProductNCEP040N85M NCEP040N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =140ADS Dswitching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimi

 0.3. Size:1123K  ncepower
ncep040n85g.pdf

NCEP040N85
NCEP040N85

http://www.ncepower.com NCEP040N85GNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP040N85G uses Super Trench II technology that is V =85V,I =120ADS Duniquely optimized to provide the most efficient high frequencyR =3.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R produc

 0.4. Size:683K  ncepower
ncep040n85gu.pdf

NCEP040N85
NCEP040N85

http://www.ncepower.com NCEP040N85GUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP040N85GU uses Super Trench II technology that is V =85V,I =125ADS Duniquely optimized to provide the most efficient high frequency R =3.2m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerlosses are minimized due to an extrem

 0.5. Size:1002K  ncepower
ncep040n85m ncep040n85md.pdf

NCEP040N85
NCEP040N85

Pb Free ProductNCEP040N85M NCEP040N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =140ADS Dswitching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimi

 0.6. Size:699K  ncepower
ncep040n85d.pdf

NCEP040N85
NCEP040N85

NCEP040N85, NCEP040N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =140ADS Dswitching performance. Both conduction and switching power R =3.5m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an extr

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