NCEP1580 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP1580
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 210 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 382 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0125 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de NCEP1580 MOSFET
- Selecciónⓘ de transistores por parámetros
NCEP1580 datasheet
ncep1580.pdf
http //www.ncepower.com NCEP1580 NCE N-Channel Super Trench Power MOSFET Description The NCEP1580 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin
ncep1580gu.pdf
http //www.ncepower.com NCEP1580GU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1580GU uses Super Trench technology that is V =150V,I =80A DS D uniquely optimized to provide the most efficient high R =12.0m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM) DS(on) switching
ncep1580d.pdf
http //www.ncepower.com NCEP1580D NCE N-Channel Super Trench Power MOSFET Description The NCEP1580D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
ncep1580f.pdf
http //www.ncepower.com NCEP1580F NCE N-Channel Super Trench Power MOSFET Description The NCEP1580F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switching
Otros transistores... NCEP072N10 , NCEP12T12 , NCEP12T12D , NCEP1520 , NCEP1545G , NCEP1545K , NCEP1570 , NCEP1570D , BS170 , NCEP15T14 , NCEP15T14D , NCEP25N10AK , NCEP3040Q , NCEP3090GU , NCEP30T12G , NCEP30T13GU , NCEP4040Q .
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Recientemente añadidas las descripciónes de los transistores:
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