NCEP25N10AK MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP25N10AK
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 105 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 123.9 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de NCEP25N10AK MOSFET
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NCEP25N10AK datasheet
ncep25n10ak.pdf
http //www.ncepower.com NCEP25N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AK uses Super Trench II technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high frequency RDS(ON)=21m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=26m (typical) @ VGS=4.5V losses
ncep25n10ad.pdf
http //www.ncepower.com NCEP25N10AD NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AD uses Super Trench II technology that is V =100V,I =35A DS D uniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =26m (typical) @ V =4.5V DS(ON) GS
ncep25n10aq.pdf
http //www.ncepower.com NCEP25N10AQ NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AQ uses Super Trench II technology that is VDS =100V,ID =27A uniquely optimized to provide the most efficient high frequency RDS(ON)=19m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=25m (typical) @ VGS=4.5V losses
ncep25n10ag.pdf
http //www.ncepower.com NCEP25N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AG uses Super Trench II technology that is VDS =100V,ID =30A uniquely optimized to provide the most efficient high frequency RDS(ON)=21m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=26m (typical) @ VGS=4.5V losses
Otros transistores... NCEP1520 , NCEP1545G , NCEP1545K , NCEP1570 , NCEP1570D , NCEP1580 , NCEP15T14 , NCEP15T14D , IRF1407 , NCEP3040Q , NCEP3090GU , NCEP30T12G , NCEP30T13GU , NCEP4040Q , NCEP4065QU , NCEP40P80D , NCEP40P80K .
History: R6520KNZ | AP70SL1K4BH | NTMFS4934N | IXFH12N90P
History: R6520KNZ | AP70SL1K4BH | NTMFS4934N | IXFH12N90P
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