NCEP30T13GU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP30T13GU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 80 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 130 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 911 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0019 Ohm
Encapsulados: DFN5X6-8L
Búsqueda de reemplazo de NCEP30T13GU MOSFET
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NCEP30T13GU datasheet
ncep30t13gu.pdf
http //www.ncepower.com NCEP30T13GU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP30T13GU uses Super Trench technology that is VDS =30V,ID =130A uniquely optimized to provide the most efficient high RDS(ON)=1.7m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=2.7m (typical) @ VGS=4.5V switching power loss
ncep30t17gu.pdf
Pb Free Product http //www.ncepower.com NCEP30T17GU NCE N-Channel Super Trench Power MOSFET Description The NCEP30T17GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g hig
ncep30t17g.pdf
Pb Free Product http //www.ncepower.com NCEP30T17G NCE N-Channel Super Trench Power MOSFET Description The NCEP30T17G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep30t19g.pdf
Pb Free Product http //www.ncepower.com NCEP30T19G NCE N-Channel Super Trench Power MOSFET Description The NCEP30T19G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
Otros transistores... NCEP1570D , NCEP1580 , NCEP15T14 , NCEP15T14D , NCEP25N10AK , NCEP3040Q , NCEP3090GU , NCEP30T12G , RFP50N06 , NCEP4040Q , NCEP4065QU , NCEP40P80D , NCEP40P80K , NCEP40PT15D , NCEP40T11G , NCEP40T13GU , NCEP40T14G .
History: ME7170
History: ME7170
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