NCEP60T15G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP60T15G 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 200 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 150 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 965 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0031 Ohm
Encapsulados: DFN5X6-8L
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NCEP60T15G datasheet
ncep60t15g.pdf
Pb Free Product http //www.ncepower.com NCEP60T15G NCE N-Channel Super Trench Power MOSFET Description The NCEP60T15G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep60t15ag.pdf
Pb Free Product http //www.ncepower.com NCEP60T15AG NCE N-Channel Super Trench Power MOSFET Description The NCEP60T15AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep60t18.pdf
Pb Free Product http //www.ncepower.com NCEP60T18 NCE N-Channel Super Trench Power MOSFET Description The NCEP60T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep60t18a.pdf
Pb Free Product http //www.ncepower.com NCEP60T18A NCE N-Channel Super Trench Power MOSFET Description The NCEP60T18A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
Otros transistores... NCEP40T15A, NCEP40T17A, NCEP6020AS, NCEP6080AG, NCEP6090, NCEP6090K, NCEP60T12AK, NCEP60T12T, 7N60, NCEP60T18, NCEP60T20, NCEP60T20A, NCEP60T20T, NCEP85T11, NCEP85T12, NCEP85T12D, NCEP85T14
Parámetros del MOSFET. Cómo se afectan entre sí.
History: SI7946ADP | UTT60P03
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