NCEP60T20 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP60T20
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 255 W
Tensión drenaje-fuente |Vds|: 60 V
Tensión compuerta-fuente |Vgs|: 20 V
Corriente continua de drenaje |Id|: 200 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente |Vgs(th)|: 3.5 V
Carga de compuerta (Qg): 130 nC
Tiempo de elevación (tr): 19 nS
Conductancia de drenaje-sustrato (Cd): 1900 pF
Resistencia drenaje-fuente RDS(on): 0.0022 Ohm
Empaquetado / Estuche: TO220
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NCEP60T20 Datasheet (PDF)
..1. ncep60t20.pdf 
Size:399K _ncepower
Pb Free Producthttp://www.ncepower.com NCEP60T20NCE N-Channel Super Trench Power MOSFET Description The NCEP60T20 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
0.1. ncep60t20a.pdf Size:388K _ncepower
Pb Free Producthttp://www.ncepower.com NCEP60T20ANCE N-Channel Super Trench Power MOSFET Description The NCEP60T20A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
0.2. ncep60t20t.pdf Size:374K _ncepower
Pb Free Producthttp://www.ncepower.com NCEP60T20TNCE N-Channel Super Trench Power MOSFET Description The NCEP60T20T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
7.1. ncep60t12ak.pdf Size:452K _ncepower
Pb Free Producthttp://www.ncepower.com NCEP60T12AKNCE N-Channel Super Trench Power MOSFET Description The NCEP60T12AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
7.2. ncep60t18.pdf Size:320K _ncepower
Pb Free Producthttp://www.ncepower.com NCEP60T18NCE N-Channel Super Trench Power MOSFET Description The NCEP60T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
7.3. ncep60t15g.pdf Size:336K _ncepower
Pb Free Producthttp://www.ncepower.com NCEP60T15GNCE N-Channel Super Trench Power MOSFET Description The NCEP60T15G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
7.4. ncep60t12a.pdf Size:487K _ncepower
Pb Free Product http://www.ncepower.com NCEP60T12A NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(O
7.5. ncep60t12t.pdf Size:348K _ncepower
http://www.ncepower.com NCEP60T12TNCE N-Channel Super Trench Power MOSFET Description The NCEP60T12T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
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