NCEP85T16 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP85T16
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 220 W
Tensión drenaje-fuente |Vds|: 85 V
Tensión compuerta-fuente |Vgs|: 20 V
Corriente continua de drenaje |Id|: 160 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente |Vgs(th)|: 4.5 V
Carga de compuerta (Qg): 105 nC
Tiempo de elevación (tr): 29 nS
Conductancia de drenaje-sustrato (Cd): 1520 pF
Resistencia drenaje-fuente RDS(on): 0.0038 Ohm
Empaquetado / Estuche: TO220
Búsqueda de reemplazo de MOSFET NCEP85T16
NCEP85T16 Datasheet (PDF)
..1. ncep85t16.pdf Size:345K _ncepower
Pb Free Producthttp://www.ncepower.com NCEP85T16NCE N-Channel Super Trench Power MOSFET Description The NCEP85T16 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
0.1. ncep85t16d.pdf Size:323K _ncepower
Pb Free Producthttp://www.ncepower.com NCEP85T16DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T16D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
6.1. ncep85t14.pdf Size:385K _ncepower
Pb Free Producthttp://www.ncepower.com NCEP85T14NCE N-Channel Super Trench Power MOSFET Description The NCEP85T14 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
6.2. ncep85t15.pdf Size:342K _ncepower
Pb Free Producthttp://www.ncepower.com NCEP85T15NCE N-Channel Super Trench Power MOSFET Description The NCEP85T15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high
6.3. ncep85t12.pdf Size:323K _ncepower
Pb Free Producthttp://www.ncepower.com NCEP85T12NCE N-Channel Super Trench Power MOSFET Description The NCEP85T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
6.4. ncep85t11.pdf Size:385K _ncepower
Pb Free Producthttp://www.ncepower.com NCEP85T11NCE N-Channel Super Trench Power MOSFET Description The NCEP85T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
6.5. ncep85t12d.pdf Size:347K _ncepower
Pb Free Producthttp://www.ncepower.com NCEP85T12DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T12D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
6.6. ncep85t14d.pdf Size:355K _ncepower
Pb Free Producthttp://www.ncepower.com NCEP85T14DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T14D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
Otros transistores... P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF3710 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: UTT6NP10G-S08-R | UTT6NP10L-S08-R | UTT6NP10G-TN4-R | UTT6NP10L-TN4-R | UTT4850G-S08-R | UTT4850L-S08-R | UTT30P06G-TN3-R | UTT30P06L-TN3-R | UTT30P06G-TQ2-R | UTT30P06L-TQ2-R | UTT30P06G-TQ2-T | UTT30P06L-TQ2-T | UTT30P06G-TM3-T | UTT30P06L-TM3-T | UTT30P06G-TF3-T | UTT30P06L-TF3-T