2SK308 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK308
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 100 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 50 nS
Cossⓘ - Capacitancia de salida: 650 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Encapsulados: TO3
Búsqueda de reemplazo de 2SK308 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK308 datasheet
..2. Size:299K inchange semiconductor
2sk308.pdf 
isc N-Channel MOSFET Transistor 2SK308 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 120V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
0.1. Size:45K 1
2sk3080.pdf
2SK3080 Silicon N Channel MOS FET High Speed Power Switching ADE-208-635A (Z) 2nd. Edition Mar. 2001 Features Low on-resistance RDS(on) = 20 m typ. (VGS = 10V, ID = 15 A) 4V gate drive devices. High speed switching Outline TO 220AB D G 1. Gate 1 2. Drain(Flange) 2 3. Source 3 S 2SK3080 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drai
0.2. Size:45K 1
2sk3081.pdf
2SK3081 Silicon N Channel MOS FET High Speed Power Switching ADE-208-636A (Z) 3rd. Edition Jul. 1998 Features Low on-resistance RDS(on) = 10m typ. 4V gate drive devices. High speed switching Outline TO 220AB D G 1. Gate 1 2. Drain(Flange) 2 3. Source 3 S 2SK3081 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS
0.3. Size:188K toshiba
2sk3089.pdf
2SK3089 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK3089 Chopper Regulator DC-DC Converter, and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 25 m (typ.) High forward transfer admittance Yfs = 20 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 30 V) Enhancement mode Vth = 1.5 3.0 V (VDS =
0.5. Size:177K toshiba
2sk3085.pdf
2SK3085 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3085 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 1.7 (typ.) High forward transfer admittance Yfs = 3 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 2.0 4.0 V (VDS
0.6. Size:108K renesas
rej03g1065 2sk3082lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.7. Size:91K renesas
2sk3082s-l.pdf
2SK3082(L), 2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1065-0300 (Previous ADE-208-637A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.055 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name L
0.8. Size:93K renesas
2sk3082stl.pdf
2SK3082(L), 2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1065-0300 (Previous ADE-208-637A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.055 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name L
0.9. Size:94K renesas
2sk3082.pdf
2SK3082(L), 2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1065-0300 (Previous ADE-208-637A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.055 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name L
0.10. Size:357K inchange semiconductor
2sk3082s.pdf
isc N-Channel MOSFET Transistor 2SK3082S FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 75m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
0.11. Size:283K inchange semiconductor
2sk3082l.pdf
isc N-Channel MOSFET Transistor 2SK3082L FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 75m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
0.12. Size:283K inchange semiconductor
2sk3089k.pdf
isc N-Channel MOSFET Transistor 2SK3089K FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
0.13. Size:289K inchange semiconductor
2sk3080.pdf
isc N-Channel MOSFET Transistor 2SK3080 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R = 28m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
0.14. Size:357K inchange semiconductor
2sk3089b.pdf
isc N-Channel MOSFET Transistor 2SK3089B FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
0.15. Size:289K inchange semiconductor
2sk3081.pdf
isc N-Channel MOSFET Transistor 2SK3081 FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R = 14m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
0.16. Size:289K inchange semiconductor
2sk3085.pdf
isc N-Channel MOSFET Transistor 2SK3085 FEATURES Drain Current I = 3.5A@ T =25 D C Drain Source Voltage V =600V(Min) DSS Static Drain-Source On-Resistance R = 2.2 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
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