2SK412 Todos los transistores

 

2SK412 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK412
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 52 nS
   Cossⓘ - Capacitancia de salida: 500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO3P

 Búsqueda de reemplazo de MOSFET 2SK412

 

2SK412 Datasheet (PDF)

 ..1. Size:226K  1
2sk412.pdf

2SK412
2SK412

 ..2. Size:285K  inchange semiconductor
2sk412.pdf

2SK412
2SK412

isc N-Channel MOSFET Transistor 2SK412FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max) @ V = 15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 0.1. Size:57K  1
2sk4123ls.pdf

2SK412
2SK412

Ordering number : ENA0826A 2SK4123LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4123LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications

 0.2. Size:57K  1
2sk4122ls.pdf

2SK412
2SK412

Ordering number : ENA0825A 2SK4122LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4122LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications

 0.3. Size:56K  1
2sk4121ls.pdf

2SK412
2SK412

Ordering number : ENA0824A 2SK4121LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4121LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications

 0.4. Size:57K  1
2sk4120ls.pdf

2SK412
2SK412

Ordering number : ENA0823A 2SK4120LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4120LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications

 0.5. Size:66K  sanyo
2sk4124.pdf

2SK412
2SK412

Ordering number : ENA0746A 2SK4124SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4124ApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Condi

 0.6. Size:66K  sanyo
2sk4126.pdf

2SK412
2SK412

Ordering number : ENA0748A 2SK4126SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4126ApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Condi

 0.7. Size:66K  sanyo
2sk4125.pdf

2SK412
2SK412

Ordering number : ENA0747A 2SK4125SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4125ApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Condi

 0.8. Size:272K  inchange semiconductor
2sk4124.pdf

2SK412
2SK412

isc N-Channel MOSFET Transistor 2SK4124FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.43(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 0.9. Size:280K  inchange semiconductor
2sk4123ls.pdf

2SK412
2SK412

isc N-Channel MOSFET Transistor 2SK4123LSFEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.34(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 0.10. Size:273K  inchange semiconductor
2sk4126.pdf

2SK412
2SK412

isc N-Channel MOSFET Transistor 2SK4126FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.72(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 0.11. Size:279K  inchange semiconductor
2sk4122ls.pdf

2SK412
2SK412

isc N-Channel MOSFET Transistor 2SK4122LSFEATURESDrain Current : I = 15.5A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.42(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 0.12. Size:272K  inchange semiconductor
2sk4125.pdf

2SK412
2SK412

isc N-Channel MOSFET Transistor 2SK4125FEATURESDrain Current : I = 17A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.61(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 0.13. Size:279K  inchange semiconductor
2sk4121ls.pdf

2SK412
2SK412

isc N-Channel MOSFET Transistor 2SK4121LSFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.56(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 0.14. Size:280K  inchange semiconductor
2sk4120ls.pdf

2SK412
2SK412

isc N-Channel MOSFET Transistor 2SK4120LSFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.68(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

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