2SK4179 Todos los transistores

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 2sk4179.pdf

Ordering number ENA1269 2SK4179 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4179 Applications Features Low ON-resistance. Motor drive. Avalanche resistance guarantee. 10V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 75 V Gate-to-S

 ..2. Size:289K  inchange semiconductor
 2sk4179.pdf

isc N-Channel MOSFET Transistor 2SK4179 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 13.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.1. Size:41K  toshiba
 2sk417.pdf

 8.2. Size:94K  sanyo
 2sk4171.pdf

Ordering number ENA0787 2SK4171 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4171 Applications Features Low ON-resistance. Load switching applications. Motor drive applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Sour

 8.3. Size:271K  sanyo
 2sk4177.pdf

Ordering number ENA0869 2SK4177 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4177 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condit

 8.4. Size:321K  renesas
 2sk4178-zk.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:321K  renesas
 2sk4178-s27-ay.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:299K  onsemi
 2sk4177.pdf

Ordering number ENA0869A 2SK4177 N-Channel Power MOSFET http //onsemi.com 1500V, 2A, 13 , TO-263-2L Features ON-resistance RDS(on)=10 (typ.) Input capacitance Ciss=380pF (typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 V Gate-to-Source Voltage VGSS 20 V Drain Cu

 8.7. Size:355K  inchange semiconductor
 2sk4178.pdf

isc N-Channel MOSFET Transistor 2SK4178 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 9.0m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.8. Size:288K  inchange semiconductor
 2sk4171.pdf

isc N-Channel MOSFET Transistor 2SK4171 FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.2m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.9. Size:232K  inchange semiconductor
 2sk4177.pdf

isc N-Channel MOSFET Transistor 2SK4177 DESCRIPTION Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 1500V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching, switch mode power supplies ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYM

 8.10. Size:287K  inchange semiconductor
 2sk4178-zk.pdf

isc N-Channel MOSFET Transistor 2SK4178-ZK FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 9.0m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole