2SK895 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK895
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
   Paquete / Cubierta: TO3PN

Búsqueda de reemplazo de MOSFET 2SK895

2SK895 Datasheet (PDF)

..1. Size:132K 1
2sk895 2sk896.pdf

..2. Size:303K inchange semiconductor
2sk895.pdf

isc N-Channel MOSFET Transistor 2SK895FEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

9.1. Size:168K 1
2sk899.pdf

9.2. Size:134K 1
2sk897-mr.pdf

9.3. Size:53K toshiba
2sk891.pdf

9.4. Size:87K toshiba
2sk890.pdf

www.DataSheet4U.com

9.5. Size:57K toshiba
2sk894.pdf

9.6. Size:137K fuji
2sk897-m.pdf

"2SK897M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK897M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK897M"Powered by ICminer.com Electronic-Library Service CopyRight 2003

9.7. Size:59K inchange semiconductor
2sk892.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK892 DESCRIPTION Drain Current ID=2.5A@ TC=25 Drain Source Voltage- : VDSS= 500V(Min) APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM R

9.8. Size:234K inchange semiconductor
2sk899.pdf

isc N-Channel MOSFET Transistor 2SK899DESCRIPTIONDrain Current I =18A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

9.9. Size:288K inchange semiconductor
2sk891.pdf

isc N-Channel MOSFET Transistor 2SK891FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 180m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

9.10. Size:303K inchange semiconductor
2sk896.pdf

isc N-Channel MOSFET Transistor 2SK896FEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

9.11. Size:59K inchange semiconductor
2sk893.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK893 DESCRIPTION Drain Current ID=5A@ TC=25 Drain Source Voltage- : VDSS=500V(Min) Fast Switching Speed APPLICATIONS High voltage. high speed power Switching. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 500 V DSS GSV G

9.12. Size:279K inchange semiconductor
2sk897-mr.pdf

isc N-Channel MOSFET Transistor 2SK897-MRFEATURESDrain Current : I = 4.0A@ T =25D CDrain Source Voltage: V = 550V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

9.13. Size:198K inchange semiconductor
2sk894.pdf

isc N-Channel MOSFET Transistor 2SK894DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage.high speed power Switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Vo

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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