FDN363N Todos los transistores

 

FDN363N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDN363N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm
   Paquete / Cubierta: SSOT3
 

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FDN363N Datasheet (PDF)

 ..1. Size:222K  1
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FDN363N

PreliminaryMay 2003FDN363NN-Channel PowerTrench MOSFET100V, 1A, 240mFeatures Applications rDS(ON) = 200m (Typ.), VGS = 10V, ID = 1A DC/DC converters Qg(tot) = 4nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse)Formerly developmental type 82720DDSGGSSuperSOT-3MOSFET Maximum

 9.1. Size:129K  fairchild semi
fdn361bn.pdf pdf_icon

FDN363N

February 2009FDN361BN30V N-Channel, Logic Level, PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 1.4 A, 30 V. RDS(ON) = 110 m @ VGS = 10 V using Fairchild Semiconductors advanced RDS(ON) = 160 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superio

 9.2. Size:775K  fairchild semi
fdn361an.pdf pdf_icon

FDN363N

April 1999FDN361ANN-Channel, Logic Level, PowerTrenchFeaturesGeneral DescriptionThis N-Channel Logic Level MOSFET is produced using 1.8 A, 30 V. RDS(on) = 0.100 @ VGS = 10 VFairchild Semiconductor's PowerTrench process that has RDS(on) = 0.150 @ VGS = 4.5 V.been especially tailored to minimize the on-state resistanceand yet maintain low

 9.3. Size:122K  fairchild semi
fdn360p.pdf pdf_icon

FDN363N

May 2003 FDN360P Single P-Channel, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 2 A, 30 V. RDS(ON) = 80 m @ VGS = 10 V using Fairchild Semiconductor advanced Power Trench RDS(ON) = 125 m @ VGS = 4.5 V process that has been especially tailored to minimize the on-state resistance and yet maintain low gate

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History: SI2301BDS | MTB30P06VT4 | HSL0004 | WSD2054DN22 | WMT04P06TS | CRTS030N04L | SWD10N65K2

 

 
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