FDN363N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDN363N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 0.5 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 1 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 4 nC
   Tiempo de subida (tr): 15 nS
   Conductancia de drenaje-sustrato (Cd): 35 pF
   Resistencia entre drenaje y fuente RDS(on): 0.24 Ohm
   Paquete / Cubierta: SSOT3

Búsqueda de reemplazo de MOSFET FDN363N

FDN363N Datasheet (PDF)

..1. Size:222K 1
fdn363n.pdf

PreliminaryMay 2003FDN363NN-Channel PowerTrench MOSFET100V, 1A, 240mFeatures Applications rDS(ON) = 200m (Typ.), VGS = 10V, ID = 1A DC/DC converters Qg(tot) = 4nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse)Formerly developmental type 82720DDSGGSSuperSOT-3MOSFET Maximum

9.1. Size:129K fairchild semi
fdn361bn.pdf

February 2009FDN361BN30V N-Channel, Logic Level, PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 1.4 A, 30 V. RDS(ON) = 110 m @ VGS = 10 V using Fairchild Semiconductors advanced RDS(ON) = 160 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superio

9.2. Size:775K fairchild semi
fdn361an.pdf

April 1999FDN361ANN-Channel, Logic Level, PowerTrenchFeaturesGeneral DescriptionThis N-Channel Logic Level MOSFET is produced using 1.8 A, 30 V. RDS(on) = 0.100 @ VGS = 10 VFairchild Semiconductor's PowerTrench process that has RDS(on) = 0.150 @ VGS = 4.5 V.been especially tailored to minimize the on-state resistanceand yet maintain low

9.3. Size:122K fairchild semi
fdn360p.pdf

May 2003 FDN360P Single P-Channel, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 2 A, 30 V. RDS(ON) = 80 m @ VGS = 10 V using Fairchild Semiconductor advanced Power Trench RDS(ON) = 125 m @ VGS = 4.5 V process that has been especially tailored to minimize the on-state resistance and yet maintain low gate

9.4. Size:244K onsemi
fdn361bn.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.5. Size:239K onsemi
fdn360p.pdf

9.6. Size:549K cn shikues
fdn360p.pdf

FDN360PP-Channel Enhancement Mode MOSFET Feature DS(ON) GS -30V/-3.2A, R =55m(MAX) @V = -10V. DS(ON) GS R = 70m(MAX) @V = -4.5V. DS(ON) GS R =120m(MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low RReliable and Rugged SOT-23 for Surface Mount Package SOT-23 Applications Power Management Portable Equipment and Battery Powered Systems

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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