FDN363N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDN363N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 35 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm
Paquete / Cubierta: SSOT3
Búsqueda de reemplazo de FDN363N MOSFET
FDN363N Datasheet (PDF)
fdn363n.pdf

PreliminaryMay 2003FDN363NN-Channel PowerTrench MOSFET100V, 1A, 240mFeatures Applications rDS(ON) = 200m (Typ.), VGS = 10V, ID = 1A DC/DC converters Qg(tot) = 4nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse)Formerly developmental type 82720DDSGGSSuperSOT-3MOSFET Maximum
fdn361bn.pdf

February 2009FDN361BN30V N-Channel, Logic Level, PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 1.4 A, 30 V. RDS(ON) = 110 m @ VGS = 10 V using Fairchild Semiconductors advanced RDS(ON) = 160 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superio
fdn361an.pdf

April 1999FDN361ANN-Channel, Logic Level, PowerTrenchFeaturesGeneral DescriptionThis N-Channel Logic Level MOSFET is produced using 1.8 A, 30 V. RDS(on) = 0.100 @ VGS = 10 VFairchild Semiconductor's PowerTrench process that has RDS(on) = 0.150 @ VGS = 4.5 V.been especially tailored to minimize the on-state resistanceand yet maintain low
fdn360p.pdf

May 2003 FDN360P Single P-Channel, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 2 A, 30 V. RDS(ON) = 80 m @ VGS = 10 V using Fairchild Semiconductor advanced Power Trench RDS(ON) = 125 m @ VGS = 4.5 V process that has been especially tailored to minimize the on-state resistance and yet maintain low gate
Otros transistores... FMW60N070S2HF , 60NM60L-T3P , 60NM60L-T47 , 60NM60G-T3P , 60NM60G-T47 , ISC60NM60L , ISCD3NK80Z , ISCNH060D , P0903BDG , ISCNH363N , ISCNH370W , ISCNH371D , ISCNH372B , ISCNH373F , ISCNH374D , ISCNH375W , ISCNH376L .
History: SQ3418AEEV | SQJ963EP | SH8M12 | KUK7575-100A | BLP08N10G-B | IPP100N08N3 | IPI80N08S4-06
History: SQ3418AEEV | SQJ963EP | SH8M12 | KUK7575-100A | BLP08N10G-B | IPP100N08N3 | IPI80N08S4-06



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