ISCNH371D Todos los transistores

 

ISCNH371D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ISCNH371D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 70 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm

Encapsulados: TO252

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ISCNH371D datasheet

 ..1. Size:286K  inchange semiconductor
iscnh371d.pdf pdf_icon

ISCNH371D

isc N-Channel MOSFET Transistor ISCNH371D FEATURES Drain Current I = 2.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 6.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

 7.1. Size:356K  inchange semiconductor
iscnh377b.pdf pdf_icon

ISCNH371D

isc N-Channel MOSFET Transistor ISCNH377B FEATURES Drain Current I = 200A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 2.3m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 7.2. Size:288K  inchange semiconductor
iscnh379p.pdf pdf_icon

ISCNH371D

isc N-Channel MOSFET Transistor ISCNH379P FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 1000V(Min) DSS Static Drain-Source On-Resistance R = 10 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 7.3. Size:580K  inchange semiconductor
iscnh375w.pdf pdf_icon

ISCNH371D

isc N-Channel MOSFET Transistor ISCNH375W FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 350m (Max)@V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

Otros transistores... 60NM60G-T3P , 60NM60G-T47 , ISC60NM60L , ISCD3NK80Z , ISCNH060D , FDN363N , ISCNH363N , ISCNH370W , 5N60 , ISCNH372B , ISCNH373F , ISCNH374D , ISCNH375W , ISCNH376L , ISCNH377B , ISCNH379P , ISF40NF20 .

History: S10H18RP | CS2N70A3R1-G

 

 

 


History: S10H18RP | CS2N70A3R1-G

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