STU03N20 Todos los transistores

 

STU03N20 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STU03N20
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 16 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.28 Ohm
   Paquete / Cubierta: TO252 DPAK

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STU03N20 Datasheet (PDF)

 ..1. Size:120K  samhop
 stu03n20 std03n20.pdf pdf_icon

STU03N20

STU03N20 Green Product STD03N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Max Rugged and reliable. 3.28 @ VGS=10V TO-252 and TO-251 Package. 200V 2A 3.59 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK (

 9.1. Size:144K  samhop
 stu03l01 std03l01.pdf pdf_icon

STU03N20

STU03L01 Green Product STD03L01 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Max Rugged and reliable. 0.9 @ VGS=10V TO-252 and TO-251 Package. 100V 2A 1.1 @ VGS=4.5V ESD Protected. G S STU SERIES STD SERIES ( ) TO - 252AA

 9.2. Size:149K  samhop
 stu03l07 std03l07.pdf pdf_icon

STU03N20

STU03L07 Green Product STD03L07 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 228 @ VGS=10V TO-252 and TO-251 Package. 70V 9A 267 @ VGS=4.5V G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO

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