STU03N20 Todos los transistores

 

STU03N20 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STU03N20

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 42 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 2 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 11 nC

Conductancia de drenaje-sustrato (Cd): 16 pF

Resistencia drenaje-fuente RDS(on): 3.28 Ohm

Empaquetado / Estuche: TO252, DPAK

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STU03N20 Datasheet (PDF)

1.1. stu03n20 std03n20.pdf Size:120K _samhop

STU03N20
STU03N20

STU03N20 Green Product STD03N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (Ω) Max Rugged and reliable. 3.28 @ VGS=10V TO-252 and TO-251 Package. 200V 2A 3.59 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK (

5.1. stu03l01 std03l01.pdf Size:144K _samhop

STU03N20
STU03N20

STU03L01 Green Product STD03L01 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (Ω) Max Rugged and reliable. 0.9 @ VGS=10V TO-252 and TO-251 Package. 100V 2A 1.1 @ VGS=4.5V ESD Protected. G S STU SERIES STD SERIES ( ) TO - 252AA

5.2. stu03l07 std03l07.pdf Size:149K _samhop

STU03N20
STU03N20

STU03L07 Green Product STD03L07 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 228 @ VGS=10V TO-252 and TO-251 Package. 70V 9A 267 @ VGS=4.5V G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO

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