MMD60R900QRH Todos los transistores

 ..1. Size:1404K  1
 mmd60r900qrh.pdf

MMD60R900Q Datasheet MMD60R900Q 600V 0.90 N-channel MOSFET Description MMD60R900Q is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as l

 ..2. Size:287K  inchange semiconductor
 mmd60r900qrh.pdf

isc N-Channel MOSFET Transistor MMD60R900QRH FEATURES Drain Current I = 4.4A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive

 5.1. Size:1134K  magnachip
 mmd60r900prh.pdf

MMD60R900P Datasheet MMD60R900P 600V 0.9 N-channel MOSFET Description MMD60R900P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo

 5.2. Size:310K  inchange semiconductor
 mmd60r900prh.pdf

isc N-Channel MOSFET Transistor MMD60R900PRH FEATURES Drain Current I = 4.5A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 8.1. Size:1225K  magnachip
 mmd60r750prh.pdf

MMD60R750P Datasheet MMD60R750P 600V 0.75 N-channel MOSFET Description MMD60R750P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 8.2. Size:1263K  magnachip
 mmd60r360prh.pdf

MMD60R360P Datasheet MMD60R360P 600V 0.38 N-channel MOSFET Description MMD60R360P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 8.3. Size:1141K  magnachip
 mmd60r580prh.pdf

MMD60R580P Datasheet MMD60R580P 600V 0.58 N-channel MOSFET Description MMD60R580P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 8.4. Size:1069K  magnachip
 mmd60r580pbrh.pdf

MMD60R580PB Datasheet MMD60R580PB 600V 0.58 N-channel MOSFET Description MMD60R580PB is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

 8.5. Size:1279K  magnachip
 mmd60r580qrh.pdf

MMD60R580Q Datasheet MMD60R580Q 600V 0.58 N-channel MOSFET Description MMD60R580Q is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 8.6. Size:1563K  magnachip
 mmd60r360qrh.pdf

MMD60R360Q Datasheet MMD60R360Q 600V 0.36 N-channel MOSFET Description MMD60R360Q is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 8.7. Size:309K  inchange semiconductor
 mmd60r750prh.pdf

isc N-Channel MOSFET Transistor MMD60R750PRH FEATURES Drain Current I = 5.7A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

 8.8. Size:278K  inchange semiconductor
 mmd60r360p.pdf

isc N-Channel MOSFET Transistor MMD60R360P FEATURES Static drain-source on-resistance RDS(on) 0.38 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gate-Source Voltage 30

 8.9. Size:309K  inchange semiconductor
 mmd60r360prh.pdf

isc N-Channel MOSFET Transistor MMD60R360PRH FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.38 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 8.10. Size:309K  inchange semiconductor
 mmd60r580prh.pdf

isc N-Channel MOSFET Transistor MMD60R580PRH FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.58 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 8.11. Size:263K  inchange semiconductor
 mmd60r580q.pdf

Isc N-Channel MOSFET Transistor MMD60R580Q FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

 8.12. Size:309K  inchange semiconductor
 mmd60r580pbrh.pdf

isc N-Channel MOSFET Transistor MMD60R580PBRH FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.58 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 8.13. Size:310K  inchange semiconductor
 mmd60r580qrh.pdf

isc N-Channel MOSFET Transistor MMD60R580QRH FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.58 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 8.14. Size:310K  inchange semiconductor
 mmd60r360qrh.pdf

isc N-Channel MOSFET Transistor MMD60R360QRH FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.36 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so