STF13N60DM2 Todos los transistores

 

STF13N60DM2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STF13N60DM2
   Código: 13N60DM2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 19 nC
   trⓘ - Tiempo de subida: 4.8 nS
   Cossⓘ - Capacitancia de salida: 38 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.365 Ohm
   Paquete / Cubierta: TO220F

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STF13N60DM2 Datasheet (PDF)

 ..1. Size:443K  st
stf13n60dm2.pdf

STF13N60DM2
STF13N60DM2

STF13N60DM2DatasheetN-channel 600 V, 0.310 typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP packageVDS RDS(on) max. IDOrder codesSTF13N60DM2 600 V 0.365 11 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance321 100% avalanche tested Extremely high dv/dt ruggednessTO-220FP Zener-protectedD(2)A

 6.1. Size:1131K  st
stf13n60m2 stfi13n60m2.pdf

STF13N60DM2
STF13N60DM2

STF13N60M2, STFI13N60M2N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTF13N60M2650 V 0.38 11 ASTFI13N60M232 Extremely low gate charge1123TO-220FP Lower RDS(on) x area vs previous generationI2PAKFP Low gate input r

 7.1. Size:564K  st
stf13n65m2 stfi13n65m2.pdf

STF13N60DM2
STF13N60DM2

STF13N65M2, STFI13N65M2N-channel 650 V, 0.37 typ., 10 A MDmesh M2 PowerMOSFETs in TO-220FP and IPAKFP packagesDatasheet - production dataFeaturesRDS(on) Order code VDS max IDSTF13N65M2650 V 0.43 10ASTFI13N65M2 Extremely low gate charge321213 Excellent output capacitance (Coss) profileTO-220FP I2PAKFP (TO-281) 100% avalanche tested

 8.1. Size:578K  st
stb13nm50n-1 stb13nm50n stf13nm50n stp13nm50n stw13nm50n.pdf

STF13N60DM2
STF13N60DM2

STB13NM50N/-1 - STF13NM50NSTP13NM50N - STW13NM50NN-channel 500 V - 0.250 - 12 A MDmesh II Power MOSFETTO-220 - TO-247 - TO-220FP - I2PAK - D2PAKFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB13NM50N 550 V 0.32 12 ATO-220 IPAKSTB13NM50N-1 550 V 0.32 12 ASTF13NM50N 550 V 0.32 12 A(1) 321STP13NM50N 550 V 0.32 12 ATO-247STW13N

 8.2. Size:650K  st
stf13n95k3 stp13n95k3 stw13n95k3.pdf

STF13N60DM2
STF13N60DM2

STF13N95K3STP13N95K3, STW13N95K3N-channel 950 V, 0.68 , 10 A TO-220, TO-220FP, TO-247Zener-protected SuperMESH3 Power MOSFETFeaturesOrder codes VDSS RDS(on)max ID PWSTF13N95K3 40 W33221STP13N95K3 950 V

 8.3. Size:577K  st
stb13nm50n stf13nm50n stp13nm50n stw13nm50n.pdf

STF13N60DM2
STF13N60DM2

STB13NM50N/-1 - STF13NM50NSTP13NM50N - STW13NM50NN-channel 500 V - 0.250 - 12 A MDmesh II Power MOSFETTO-220 - TO-247 - TO-220FP - I2PAK - D2PAKFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB13NM50N 550 V 0.32 12 ATO-220 IPAKSTB13NM50N-1 550 V 0.32 12 ASTF13NM50N 550 V 0.32 12 A(1) 321STP13NM50N 550 V 0.32 12 ATO-247STW13N

 8.4. Size:781K  st
stf13nm60n-h.pdf

STF13N60DM2
STF13N60DM2

STF13NM60N-HN-channel 600 V, 0.28 , 11 A MDmesh II Power MOSFETin TO-220FPFeaturesVDSS RDS(on) Type ID(@Tjmax) maxSTF13NM60N-H 650 V

 8.5. Size:1276K  st
stb13nm60n std13nm60n stf13nm60n stp13nm60n stw13nm60n.pdf

STF13N60DM2
STF13N60DM2

STB13NM60N,STD13NM60N,STF13NM60NSTP13NM60N,STW13NM60NN-channel 600 V, 0.28 , 11 A MDmesh II Power MOSFETin D2PAK, DPAK, TO-220FP, TO-220, TO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) max3322STB13NM60N 650 V

 8.6. Size:1760K  st
stb13n80k5 stf13n80k5 stp13n80k5 stw13n80k5.pdf

STF13N60DM2
STF13N60DM2

STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5N-channel 800 V, 0.37 typ., 12 A SuperMESH 5 PowerMOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeatures TABOrder codes VDS RDS(on) ID PTOT31STB13N80K5 190 W3D2PAK21STF13N80K5 35 WTO-220FP800 V 0.45 12 ATABSTP13N80K5190 WSTW13N80K5 Worldwide best FOM (figur

 8.7. Size:1546K  st
std13nm60nd stf13nm60nd stp13nm60nd.pdf

STF13N60DM2
STF13N60DM2

STD13NM60ND, STF13NM60ND, STP13NM60NDN-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK, TO-220FP and TO-220 packagesDatasheet - production dataFeaturesTABOrder codes VDS @ TJmax RDS(on) max ID313STD13NM60ND21DPAKSTF13NM60ND 650 V 0.38 11 ATO-220FPSTP13NM60NDTAB The worldwide best RDS(on)* area among fast recove

 8.8. Size:856K  st
stf13n95k3 stfi13n95k3 stp13n95k3 stw13n95k3.pdf

STF13N60DM2
STF13N60DM2

STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3N-channel 950 V, 0.68 typ., 10 A Zener-protected SuperMESH3 Power MOSFET in TO-220FP, I2PAKFP, TO-220 and TO-247Datasheet - production dataFeaturesOrder codes VDSS RDS(on)max ID PTOTSTF13N95K340 WSTFI13N95K3950 V

 8.9. Size:984K  st
stf13nm60n sti13nm60n stp13nm60n stu13nm60n stw13nm60n.pdf

STF13N60DM2
STF13N60DM2

STF13NM60N, STI13NM60N, STP13NM60N,STU13NM60N, STW13NM60NN-channel 600 V, 0.28 typ., 11 A MDmesh II Power MOSFET in TO-220FP, IPAK, TO-220, IPAK, TO-247 packagesDatasheet production dataFeaturesTABVDSS RDS(on) Order codes ID(@Tjmax) max3322 1STF13NM60N 1IPAKTO-220FPSTI13NM60NSTP13NM60N 650 V

 8.10. Size:516K  st
stf13nk50z stp13nk50z stw13nk50z.pdf

STF13N60DM2
STF13N60DM2

STF13NK50ZSTP13NK50Z, STW13NK50ZN-channel 500 V, 0.40 , 11 A TO-220, TO-220FP, TO-247Zener-protected SuperMESHTM Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTF13NK50Z 500 V

 8.11. Size:200K  inchange semiconductor
stf13nm60n.pdf

STF13N60DM2
STF13N60DM2

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STF13NM60NFEATURESLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

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