STF23N80K5 Todos los transistores

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 stf23n80k5.pdf

STF23N80K5 N-channel 800 V, 0.23 typ., 16 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STF23N80K5 800 V 0.28 16 A 35 W Industry s lowest R x area DS(on) Industry s best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected TO-220F

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 stf23n80k5.pdf

STF23N80K5 N-channel 800 V, 0.23 typ., 16 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STF23N80K5 800 V 0.28 16 A 35 W Industry s lowest R x area DS(on) Industry s best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected TO-220F

 ..3. Size:280K  inchange semiconductor
 stf23n80k5.pdf

isc N-Channel MOSFET Transistor STF23N80K5 FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 0.28 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

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 stb23nm60n stf23nm60n sti23nm60n stp23nm60n stw23nm60n.pdf

STB23NM60N-STF23NM60N STI23NM60N-STP23NM60N-STW23NM60N N-channel 600 V - 0.150 - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh Power MOSFET Features VDSS RDS(on) Type ID 3 (@Tjmax) max 3 1 2 1 STB23NM60N 19 A D PAK I PAK STI23NM60N 19 A 3 STF23NM60N 650 V 0.180 19 A (1) 2 1 STP23NM60N 19 A TO-247 STW23NM60N 19 A 3 3 2 2 1 1 1. Limited

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 stb23nm60nd sti23nm60nd stf23nm60nd stp23nm60nd stw23nm60nd.pdf

STx23NM60ND N-channel 600 V, 0.150 , 19.5 A, FDmesh II Power MOSFET (with fast diode) D PAK, I PAK, TO-220, TO-220FP, TO-247 Features VDSS RDS(on) Type ID 3 max. 3 (@Tjmax) 1 2 1 STx23NM60ND 650 V

 8.3. Size:558K  st
 stb23nm60n stf23nm60n sti23nm60n stp23nm60n stw23nm60n.pdf

STB23NM60N-STF23NM60N STI23NM60N-STP23NM60N-STW23NM60N N-channel 600 V - 0.150 - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh Power MOSFET Features VDSS RDS(on) Type ID 3 (@Tjmax) max 3 1 2 1 STB23NM60N 19 A D PAK I PAK STI23NM60N 19 A 3 STF23NM60N 650 V 0.180 19 A (1) 2 1 STP23NM60N 19 A TO-247 STW23NM60N 19 A 3 3 2 2 1 1 1. Limited

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 stb23nm50n stf23nm50n stp23nm50n stw23nm50n.pdf

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 stf23nm50n.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STF23NM50N FEATURES Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage