STP43N60DM2 Todos los transistores

 

STP43N60DM2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STP43N60DM2
   Código: 43N60DM2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 250 W
   Voltaje máximo drenador - fuente |Vds|: 600 V
   Voltaje máximo fuente - puerta |Vgs|: 25 V
   Corriente continua de drenaje |Id|: 34 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
   Carga de la puerta (Qg): 56 nC
   Tiempo de subida (tr): 27 nS
   Conductancia de drenaje-sustrato (Cd): 120 pF
   Resistencia entre drenaje y fuente RDS(on): 0.093 Ohm
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de MOSFET STP43N60DM2

 

STP43N60DM2 Datasheet (PDF)

 ..1. Size:322K  st
stp43n60dm2.pdf

STP43N60DM2 STP43N60DM2

STP43N60DM2 N-channel 600 V, 0.085 typ., 34 A MDmesh DM2 Power MOSFET in a TO-220 package Datasheet - production data Features V @ R DS DS(on)Order code I P D TOTTJmax. max. STP43N60DM2 650 V 0.093 34 A 250 W Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high

 9.1. Size:252K  samhop
stb434s stp434s.pdf

STP43N60DM2 STP43N60DM2

GreenProductSTB/P434SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.9.2 @ VGS=10VTO-220 and TO-263 Package.60A40V11.5 @ VGS=4.5VDGSTB SERIESSTP SERIESTO-263(DD-PAK)TO-220S(TA=25C

 9.2. Size:237K  samhop
stb432s stp432s.pdf

STP43N60DM2 STP43N60DM2

STB/P432SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for extremely low RDS(ON).RDS(ON) (m) MaxVDSS IDHigh power and current handling capability.9 @ VGS=10VTO-220 & TO-263 package.40V 60A11 @ VGS=4.5VS TB S E R IE S S TP S E R IE STO-263(DD-PAK) TO-220(TC=25

 9.3. Size:256K  samhop
stb438a stp438a.pdf

STP43N60DM2 STP43N60DM2

GreenProductSTB/P438AaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for extremely low RDS(ON).RDS(ON) (m) MaxVDSS IDHigh power and current handling capability.8.5 @ VGS=10VTO-220 & TO-263 package.40V 60A11 @ VGS=4.5VS TB S E R IE S S TP S E R IE STO-263

 9.4. Size:262K  samhop
stb438s stp438s.pdf

STP43N60DM2 STP43N60DM2

GreenProductSTB/P438SaS mHop Microelectronics C orp.Ver1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for extremely low RDS(ON).RDS(ON) (m) MaxVDSS IDHigh power and current handling capability.9 @ VGS=10VTO-220 & TO-263 package.40V 60A10 @ VGS=4.5VS TB S E R IE S S TP S E R IE STO-263(DD

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


STP43N60DM2
  STP43N60DM2
  STP43N60DM2
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: MRF5035 | MRF5015 | MRF5007R1 | MRF5007 | MRF5003 | MRF275G | MRF184S | MRF184 | MRF177M | MRF177 | MRF176GV | MRF176GU | MRF175LV | MRF175LU | MRF175GV | MRF175GU

 

 

 
Back to Top