STP43N60DM2 Todos los transistores

STP43N60DM2 N-channel 600 V, 0.085 typ., 34 A MDmesh DM2 Power MOSFET in a TO-220 package Datasheet - production data Features V @ R DS DS(on) Order code I P D TOT TJmax. max. STP43N60DM2 650 V 0.093 34 A 250 W Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high

Green Product STB/P434S a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 9.2 @ VGS=10V TO-220 and TO-263 Package. 60A 40V 11.5 @ VGS=4.5V D G STB SERIES STP SERIES TO-263(DD-PAK) TO-220 S (TA=25 C

Green Product STB/P438A a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for extremely low RDS(ON). RDS(ON) (m ) Max VDSS ID High power and current handling capability. 8.5 @ VGS=10V TO-220 & TO-263 package. 40V 60A 11 @ VGS=4.5V S TB S E R IE S S TP S E R IE S TO-263

Green Product STB/P438S a S mHop Microelectronics C orp. Ver1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for extremely low RDS(ON). RDS(ON) (m ) Max VDSS ID High power and current handling capability. 9 @ VGS=10V TO-220 & TO-263 package. 40V 60A 10 @ VGS=4.5V S TB S E R IE S S TP S E R IE S TO-263(DD