SI1078X MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI1078X
   Código: D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.24 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 1.02 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
   Qgⓘ - Carga de la puerta: 3 nC
   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 21 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.142 Ohm
   Paquete / Cubierta: SC-89-6 SOT-563F

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SI1078X Datasheet (PDF)

..1. Size:216K vishay
si1078x.pdf

Si1078Xwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) 100 % Rg tested0.142 at VGS = 10 V 1.02 Typical ESD performance 1400 V30 0.154 at VGS = 4 V 0.98 1.5 Material categorization:0.195 at VGS = 2.5 V 0.87for definitions of compliance please see www.v

9.1. Size:120K vishay
si1070x.pdf

Si1070XVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.099 at VGS = 4.5 V 1.2a TrenchFET Power MOSFET30 3.50.140 at VGS = 2.5 V 1.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable De

9.2. Size:163K vishay
si1077x.pdf

Si1077XVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) Typical ESD Performance 2500 V0.078 at VGS = - 4.5 V - 1.4 100 % Rg Tested Material categorization:0.098 at VGS = - 2.5 V - 1- 20 12.1 nCFor definitions of compliance please see 0.130 at VGS = - 1.8 V - 1www.vi

9.3. Size:122K vishay
si1072x.pdf

Si1072XVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.093 at VGS = 10 V 1.3a TrenchFET Power MOSFET30 5.410.129 at VGS = 4.5 V 1.2 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable De

9.4. Size:203K vishay
si1079x.pdf

Si1079Xwww.vishay.comVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Typical ESD performance 2500 V0.100 at VGS = -4.5 V -1.44 100 % Rg tested-30 0.112 at VGS = -3.7 V -1.36 8.1 nC Material categorization: 0.140 at VGS = -2.5 V -1.22For definitions of compliance please s

9.5. Size:121K vishay
si1073x.pdf

Si1073XVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.173 at VGS = - 10 V - 0.98a TrenchFET Power MOSFET- 30 3.250.243 at VGS = - 4.5 V - 0.83 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load SwitchSC-8

9.6. Size:121K vishay
si1071x.pdf

Si1071XVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.960.167 at VGS = - 10 V TrenchFET Power MOSFET- 30 0.90 3.250.188 at VGS = - 4.5 V 100 % Rg Tested0.244 at VGS = - 2.5 V 0.79 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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