SI1902DL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI1902DL
Código: PA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.27 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 0.66 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 VQgⓘ - Carga de la puerta: 0.8 nC
trⓘ - Tiempo de subida: 16 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.385 Ohm
Paquete / Cubierta: SOT-363 SC-70-6
Búsqueda de reemplazo de MOSFET SI1902DL
SI1902DL Datasheet (PDF)
si1902dl.pdf
Si1902DLVishay SiliconixDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition TrenchFET Power MOSFETs: 2.5 V Rated0.385 at VGS = 4.5 V 0.7020 Compliant to RoHS Directive 2002/95/EC0.630 at VGS = 2.5 V 0.54SOT-363 SC-70 (6-LEADS)S1 1 6 D1 M arking C o d eMarking Code
si1902cdl.pdf
New ProductSi1902CDLVishay SiliconixDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition TrenchFET Power MOSFET0.235 at VGS = 4.5 V 1.120 0.9 100 % Rg Tested0.306 at VGS = 2.5 V 1 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch and DC
si1905bd.pdf
Si1905BDHVishay SiliconixDual P-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.542 at VGS = - 4.5 V - 0.63 TrenchFET Power MOSFET- 8 0.798 at VGS = - 2.5 V - 0.52 10.5 nC Compliant to RoHS Directive 2002/95/EC1.2 at VGS = - 1.8 V - 0.20APPLICATIONS Load Switc
si1907dl.pdf
Si1907DLVishay SiliconixDual P-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETS: 1.8 V RatedVDS (V) rDS(on) ()ID (A)Pb-free0.650 at VGS = - 4.5 V 0.56 AvailableRoHS*0.925 at VGS = - 2.5 V 0.47- 12COMPLIANT1.310 at VGS = - 1.8 V 0.39SOT-363SC-70 (6-LEADS)S1 1 6 D1M arking C odeMarking Code PA X XQC X5G1 2 G2
si1900dl.pdf
Si1900DLVishay SiliconixDual N-Channel 30 V (D-S) MOSFET#FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.480 at VGS = 10 V 0.63 TrenchFET Power MOSFET300.700 at VGS = 4.5 V 0.52 Compliant to RoHS Directive 2002/95/ECSOT-363SC-70 (6-LEADS)S1 1 6 D1Marking CodePB XX5G1 2 G2Lot Traceabili
si1906dl.pdf
Si1906DLNew ProductVishay SiliconixN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (mA)2.0 @ VGS = 4.5 V 25020202.5 @ VGS = 2.5 V 150SOT-363SC-70 (6-Leads)Marking CodeS1 1 6 D1PC XXG1 2 5 G2Lot Traceabilityand Date Code4D2 3 S2Part # CodeTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit Unit
si1901dl.pdf
Si1901DLNew ProductVishay SiliconixP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (mA)3.8 @ VGS = 4.5 V 18020205.0 @ VGS = 2.5 V 100SOT-363SC-70 (6-Leads)Marking CodeS1 1 6 D1QD XXG1 2 5 G2Lot Traceabilityand Date Code4D2 3 S2Part # CodeTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter S
si1905dl.pdf
Si1905DLNew ProductVishay SiliconixDual P-Channel 1.8-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.600 @ VGS = 4.5 V"0.60880.850 @ VGS = 2.5 V "0.501.200 @ VGS = 1.8 V "0.42SOT-363SC-70 (6-LEADS)S1 1 6 D1 Marking CodeQB XX5G1 2 G2Lot Traceabilityand Date CodePart # CodeD2 3 4 S2Top ViewABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLE
si1903dl.pdf
SMD Type MOSFETDual P-Channel MOSFETSI1903DL (KI1903DL) Features VDS (V) =-20V ID =-4.1 A (VGS =-10V) RDS(ON) 0.995 (VGS =-4.5V) RDS(ON) 1.19 (VGS =-3.6V) RDS(ON) 1.8 (VGS =-2.5V)1 S1 4 S22 G1 5 G23 D2 6 D1S1 1 6 D15G1 2 G2D2 3 4 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol 5 Secs Steady State Unit Drain-S
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918