FDD4243F085 Todos los transistores

November 2007 FDD4243 40V P-Channel PowerTrench MOSFET -40V, -14A, 44m Features General Description Max rDS(on) = 44m at VGS = -10V, ID = -6.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor s proprietary PowerTrench technology to Max rDS(on) = 64m at VGS = -4.5V, ID = -5.5A deliver low rDS(on) and optimized Bvdss capability to offer High p

December 2010 FDD4243_F085 P-Channel PowerTrench MOSFET -40V, -14A, 64m Applications Features Typ rDS(on) = 36m at VGS = -10V, ID = -6.7A Inverter Typ rDS(on) = 48m at VGS = -4.5V, ID = -5.5A Power Supplies Typ Qg(TOT) = 21nC at VGS = -10V High performance trench technology for extremely low rDS(on) RoHS Compliant Qualified to AEC Q101 2010 Fairchild Semicond

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDD4243-F085 P-Channel PowerTrench MOSFET -40V, -14A, 64m Features Applications Typ rDS(on) = 36m at VGS = -10V, ID = -6.7A Inverter Typ rDS(on) = 48m at VGS = -4.5V, ID = -5.5A Power Supplies Typ Qg(TOT) = 21nC at VGS = -10V High performance trench technology for extremely low rDS(on) RoHS Compliant Qualified to AEC Q101 2010 Semiconduct

FDD4243 www.VBsemi.tw P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -40 Package with low thermal resistance RDS(on) ( ) at VGS = -10 V 0.012 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.015 ID (A) -50 Configuration Single TO-252 S G D D G S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unle