FDD4243F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

November 2007FDD424340V P-Channel PowerTrench MOSFET -40V, -14A, 44mFeatures General Description Max rDS(on) = 44m at VGS = -10V, ID = -6.7AThis P-Channel MOSFET has been produced using Fairchild Semiconductors proprietary PowerTrench technology to Max rDS(on) = 64m at VGS = -4.5V, ID = -5.5Adeliver low rDS(on) and optimized Bvdss capability to offer High p

December 2010FDD4243_F085P-Channel PowerTrench MOSFET-40V, -14A, 64m ApplicationsFeatures Typ rDS(on) = 36m at VGS = -10V, ID = -6.7A Inverter Typ rDS(on) = 48m at VGS = -4.5V, ID = -5.5A Power Supplies Typ Qg(TOT) = 21nC at VGS = -10V High performance trench technology for extremely low rDS(on) RoHS Compliant Qualified to AEC Q101 2010 Fairchild Semicond

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDD4243-F085P-Channel PowerTrench MOSFET-40V, -14A, 64mFeaturesApplications Typ rDS(on) = 36m at VGS = -10V, ID = -6.7A Inverter Typ rDS(on) = 48m at VGS = -4.5V, ID = -5.5A Power Supplies Typ Qg(TOT) = 21nC at VGS = -10V High performance trench technology for extremely lowrDS(on) RoHS Compliant Qualified to AEC Q1012010 Semiconduct

FDD4243www.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unle