SI7153DN MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SI7153DN datasheet

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Si7153DN www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen. III P-Channel power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) 100 % Rg and UIS tested 0.0095 at VGS = -10 V -18 a Material categorization -30 0.0120 at VGS = -6 V -18 a 31 nC For definitions of compliance please see 0.0150 at VGS = -4.5 V -18 a www.vi

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New Product Si7159DP Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.007 at VGS = - 10 V - 30d 100% Rg Tested RoHS - 30 63 nC COMPLIANT 100% UIS Tested 0.0105 at VGS = - 4.5 V - 30d PowerPAK SO-8 APPLICATIONS Notebook Battery Charging S Notebook

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Si7157DP Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen III P-Channel Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0016 at VGS = - 10 V - 60d Material categorization For definitions of compliance please see - 20 0.0020 at VGS = - 4.5 V - 60d 202.5 nC www.vishay.com/doc?99912 0.0032 at VGS

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Si7156DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0035 at VGS = 10 V 50 TrenchFET Power MOSFET 40 45 nC 0.0047 at VGS = 4.5 V 50 100 % Rg Tested 100 % Avalanche Tested PowerPAK SO-8 APPLICATIONS Synchronous Rectification S 6.