SIHA22N60AE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SIHA22N60AE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 33 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 33 nS
Cossⓘ - Capacitancia de salida: 73 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Encapsulados: TO-220F
Búsqueda de reemplazo de SIHA22N60AE MOSFET
- Selecciónⓘ de transistores por parámetros
SIHA22N60AE datasheet
siha22n60ae.pdf
SiHA22N60AE www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Thin-Lead TO-220 FULLPAK Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses G Ultra low gate charge (Qg) Available Avalanche energy rated (UIS) Material categorization for definitions of compliance S please see www.vishay.co
siha22n60ael.pdf
SiHA22N60AEL www.vishay.com Vishay Siliconix EL Series Power MOSFET FEATURES D Thin-Lead TO-220 FULLPAK Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses G Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization for definitions of compliance S please see www.vishay.com/doc?999
siha22n60e.pdf
SiHA22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.18 Reduced switching and conduction losses Qg max. (nC) 86 Ultra low gate charge (Qg) Qgs (nC) 11 Avalanche energy rated (UIS) Qgd (nC) 24
siha21n60ef.pdf
SiHA21N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES D Thin-Lead TO-220 FULLPAK Fast body diode MOSFET using E series technology Reduced trr, Qrr, and IRRM Low figure-of-merit (FOM) Ron x Qg G Low input capacitance (Ciss) Available Increased robustness due to low Qrr Ultra low gate charge (Qg) Avalanche en
Otros transistores... SIA445EDJT , SIA465EDJ , SIA468DJ , SIA469DJ , SIA472EDJ , SIA918EDJ , SIA923AEDJ , SIHA21N60EF , P60NF06 , SIHA22N60AEL , SIHD4N80E , SIHG17N80E , SIHG70N60EF , SIHH180N60E , SIHH27N60EF , SIHP11N80E , SIHP120N60E .
History: NTTFS4941N | SWP70N10V | TPCP8001-H | SE472 | SL9N150T | SPB80N06S2-09
History: NTTFS4941N | SWP70N10V | TPCP8001-H | SE472 | SL9N150T | SPB80N06S2-09
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