FDD4685F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

December 2010FDD4685_F085P-Channel PowerTrench MOSFET-40V, -32A, 35m ApplicationsFeatures Typ rDS(on) = 23m at VGS = -10V, ID = -8.4A Inverter Typ rDS(on) = 30m at VGS = -4.5V, ID = -7A Power Supplies Typ Qg(TOT) = 19nC at VGS = -5V High performance trench technology for extremely low rDS(on) RoHS Compliant Qualified to AEC Q101 2010 Fairchild Semiconduct

October 2006FDD4685tm40V P-Channel PowerTrench MOSFET 40V, 32A, 27mFeatures General Description Max rDS(on) = 27m at VGS = 10V, ID = 8.4AThis P-Channel MOSFET has been produced using Fairchild Semiconductors proprietary PowerTrench technology to Max rDS(on) = 35m at VGS = 4.5V, ID = 7Adeliver low rDS(on) and good switching characteristic of

FDD4685-F085P-Channel PowerTrench MOSFET-40 V, -32 A, 35 mFeatures Typical RDS(on) = 23 m at VGS = -10V, ID = -8.4 A Typical RDS(on) = 30 m at VGS = -4.5V, ID = -7 A Typical Qg(tot) = 19 nC at VGS = -5V, ID = -8.4 A UIS CapabilityD RoHS Compliant G Qualified to AEC Q101SApplicationsD-PAKTO-252(TO-252) Inverter Power Supplies

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDD4685www.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unle