FDD4685F085 Todos los transistores

December 2010 FDD4685_F085 P-Channel PowerTrench MOSFET -40V, -32A, 35m Applications Features Typ rDS(on) = 23m at VGS = -10V, ID = -8.4A Inverter Typ rDS(on) = 30m at VGS = -4.5V, ID = -7A Power Supplies Typ Qg(TOT) = 19nC at VGS = -5V High performance trench technology for extremely low rDS(on) RoHS Compliant Qualified to AEC Q101 2010 Fairchild Semiconduct

October 2006 FDD4685 tm 40V P-Channel PowerTrench MOSFET 40V, 32A, 27m Features General Description Max rDS(on) = 27m at VGS = 10V, ID = 8.4A This P-Channel MOSFET has been produced using Fairchild Semiconductor s proprietary PowerTrench technology to Max rDS(on) = 35m at VGS = 4.5V, ID = 7A deliver low rDS(on) and good switching characteristic of

FDD4685-F085 P-Channel PowerTrench MOSFET -40 V, -32 A, 35 m Features Typical RDS(on) = 23 m at VGS = -10V, ID = -8.4 A Typical RDS(on) = 30 m at VGS = -4.5V, ID = -7 A Typical Qg(tot) = 19 nC at VGS = -5V, ID = -8.4 A UIS Capability D RoHS Compliant G Qualified to AEC Q101 S Applications D-PAK TO-252 (TO-252) Inverter Power Supplies

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDD4685 www.VBsemi.tw P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -40 Package with low thermal resistance RDS(on) ( ) at VGS = -10 V 0.012 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.015 ID (A) -50 Configuration Single TO-252 S G D D G S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unle