2SK2486 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2486
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 2.5 V
Qgⓘ - Carga de la puerta: 55 nC
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 250 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
Paquete / Cubierta: TO3P
Búsqueda de reemplazo de MOSFET 2SK2486
2SK2486 Datasheet (PDF)
2sk2486.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2486SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2486 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.FEATURES 4.7 MAX.15.7 MAX. 3.20.21.5 Low On-Resistance4RDS (on) = 2.0 (VGS = 10 V, ID = 4.0 A) Low Ciss Ciss = 1 830
2sk2480.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2480SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2480 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.FEATURES10.00.3 4.50.23.20.2 Low On-Resistance2.70.2RDS (on) = 4.0 (VGS = 10 V, ID = 2.0 A) Low Ciss Ciss = 90
2sk2485.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2485SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2485 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.4.7 MAX.FEATURES15.7 MAX. 3.20.21.5 Low On-Resistance4RDS (on) = 2.8 (VGS = 10 V, ID = 3.0 A) Low Ciss Ciss = 1 20
2sk2484.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2484SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2484 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for high voltage switching applications.10.6 MAX. 4.8 MAX.FEATURES3.6 0.21.3 0.2 Low On-Resistance10.0RDS(on) = 2.8 (VGS = 10 V, ID = 3.0 A) Low Ci
2sk2480.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2480SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2480 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.FEATURES10.00.3 4.50.23.20.2 Low On-Resistance2.70.2RDS (on) = 4.0 (VGS = 10 V, ID = 2.0 A) Low Ciss Ciss = 90
2sk2482.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2482SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2482 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.FEATURES 4.7 MAX.15.7 MAX. 3.20.21.5 Low On-ResistanceRDS (on) = 4.0 (VGS = 10 V, ID = 3.0 A) 4 Low Ciss Ciss = 900 pF
2sk2483.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2483SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2483 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.FEATURES10.00.3 4.50.23.20.2 Low On-Resistance2.70.2RDS (on) = 2.8 (VGS = 10 V, ID = 2.0 A) Low Ciss Ciss = 1
2sk2487.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2487SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2487 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.FEATURES 4.7 MAX.15.7 MAX. 3.20.21.5 Low On-Resistance4RDS (on) = 1.6 (VGS = 10 V, ID = 4.0 A) Low Ciss Ciss = 2 100
2sk2481.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2481SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2481 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for high voltage switching applications.10.6 MAX. 4.8 MAX.FEATURES 3.6 0.21.3 0.210.0 Low On-ResistanceRDS(on) = 4.0 (VGS = 10 V, ID = 2.0 A) Low Cis
2sk2488.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2488SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2488 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high voltage switching applications.FEATURES4.7 MAX.15.7 MAX. 3.20.2 Low On-Resistance1.5RDS (on) = 1.2 (VGS = 10 V, ID = 5.0 A)4 Low Ciss Ciss = 2 90
2sk2489.pdf
SHINDENGENVZ Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2489Case : STO-220(Unit : mm)( F10S18VZ )180V 10AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION DC/DC converters Power supplies of DC 12-24V input Pr
2sk2485.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK2485FEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
Otros transistores... 2SK2478 , 2SK2479 , 2SK2480 , 2SK2481 , 2SK2482 , 2SK2483 , 2SK2484 , 2SK2485 , EMB04N03H , 2SK2487 , 2SK2488 , 2SK2494-01 , 2SK2498 , 2SK2499 , 2SK2510 , 2SK2511 , 2SK2512 .
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