FDD5612 Todos los transistores

 

FDD5612 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDD5612
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: TO252 DPAK
 

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FDD5612 datasheet

 ..1. Size:80K  fairchild semi
 fdd5612.pdf pdf_icon

FDD5612

March 2001 FDD5612 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed Features specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional 18 A, 60 V. RDS(ON) = 55 m @ VGS = 10 V switching PWM controllers. RDS(ON) = 64 m @ VGS = 6 V These MOSFETs feature fas

 8.1. Size:101K  fairchild semi
 fdd5614p.pdf pdf_icon

FDD5612

May 2005 FDD5614P 60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild s high 15 A, 60 V. RDS(ON) = 100 m @ VGS = 10 V voltage PowerTrench process. It has been optimized RDS(ON) = 130 m @ VGS = 4.5 V for power management applications. Fast switching speed Applications High performance tren

 8.2. Size:515K  onsemi
 fdd5614p.pdf pdf_icon

FDD5612

FDD5614P 60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses ON Semiconductor s 15 A, 60 V. RDS(ON) = 100 m @ VGS = 10 V high voltage PowerTrench process. It has been optimized RDS(ON) = 130 m @ VGS = 4.5 V for power management applications. Fast switching speed Applications High performance trench tech

 8.3. Size:870K  cn vbsemi
 fdd5614p.pdf pdf_icon

FDD5612

FDD5614P www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symb

MOSTRAR MÁS

Otros transistores... FDD3N50NZ , FDD4141 , FDD4141F085 , FDD4243 , FDD4243F085 , FDD4685 , FDD4685F085 , FDD5353 , K2611 , FDD5614P , FDD5670 , FDD5810F085 , FDD5N50 , FDD5N50F , FDD5N50NZ , FDD5N50NZF , FDD5N50U .

History: FDD8424H

 

 

 


 
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