FDD5612 Todos los transistores

March 2001 FDD5612 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed Features specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional 18 A, 60 V. RDS(ON) = 55 m @ VGS = 10 V switching PWM controllers. RDS(ON) = 64 m @ VGS = 6 V These MOSFETs feature fas

May 2005 FDD5614P 60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild s high 15 A, 60 V. RDS(ON) = 100 m @ VGS = 10 V voltage PowerTrench process. It has been optimized RDS(ON) = 130 m @ VGS = 4.5 V for power management applications. Fast switching speed Applications High performance tren

FDD5614P 60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses ON Semiconductor s 15 A, 60 V. RDS(ON) = 100 m @ VGS = 10 V high voltage PowerTrench process. It has been optimized RDS(ON) = 130 m @ VGS = 4.5 V for power management applications. Fast switching speed Applications High performance trench tech

FDD5614P www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symb