FDD5612 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD5612  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 42 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm

Encapsulados: TO252 DPAK

  📄📄 Copiar 

 Búsqueda de reemplazo de FDD5612 MOSFET

- Selecciónⓘ de transistores por parámetros

 

FDD5612 datasheet

 ..1. Size:80K  fairchild semi
 fdd5612.pdf pdf_icon

FDD5612

March 2001 FDD5612 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed Features specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional 18 A, 60 V. RDS(ON) = 55 m @ VGS = 10 V switching PWM controllers. RDS(ON) = 64 m @ VGS = 6 V These MOSFETs feature fas

 8.1. Size:101K  fairchild semi
 fdd5614p.pdf pdf_icon

FDD5612

May 2005 FDD5614P 60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild s high 15 A, 60 V. RDS(ON) = 100 m @ VGS = 10 V voltage PowerTrench process. It has been optimized RDS(ON) = 130 m @ VGS = 4.5 V for power management applications. Fast switching speed Applications High performance tren

 8.2. Size:515K  onsemi
 fdd5614p.pdf pdf_icon

FDD5612

FDD5614P 60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses ON Semiconductor s 15 A, 60 V. RDS(ON) = 100 m @ VGS = 10 V high voltage PowerTrench process. It has been optimized RDS(ON) = 130 m @ VGS = 4.5 V for power management applications. Fast switching speed Applications High performance trench tech

 8.3. Size:870K  cn vbsemi
 fdd5614p.pdf pdf_icon

FDD5612

FDD5614P www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symb

MOSTRAR MÁS

Otros transistores... FDD3N50NZ, FDD4141, FDD4141F085, FDD4243, FDD4243F085, FDD4685, FDD4685F085, FDD5353, SI2302, FDD5614P, FDD5670, FDD5810F085, FDD5N50, FDD5N50F, FDD5N50NZ, FDD5N50NZF, FDD5N50U