SQ3418AEEV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SQ3418AEEV
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 112 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
   Paquete / Cubierta: TSOP-6

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SQ3418AEEV Datasheet (PDF)

..1. Size:84K vishay
sq3418aeev.pdf

Work-In-ProgressSQ3418AEEVwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 40 Typical ESD protection 800 VRDS(on) () at VGS = 10 V 0.032 AEC-Q101 qualifieddRDS(on) () at VGS = 4.5 V 0.042 100 % Rg and UIS testedID (A) 8 Material categorization:Configuration Singl

8.1. Size:210K vishay
sq3418eev.pdf

SQ3418EEVwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.032 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.048 Typical ESD Protection 800 VID (A) 8 AEC-Q101 QualifieddConfiguration Single 100 % Rg an

8.2. Size:239K vishay
sq3418ev.pdf

SQ3418EVwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 40 AEC-Q101 qualified dRDS(on) () at VGS = 10 V 0.032 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.042 Material categorization: ID (A) 8for definitions of compliance please see Configuration Singlewww.vi

9.1. Size:209K vishay
sq3419eev.pdf

SQ3419EEVwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 40 TrenchFET Power MOSFETRDS(on) () at VGS = - 10 V 0.050 AEC-Q101 QualifieddRDS(on) () at VGS = - 4.5 V 0.078 100 % Rg and UIS TestedID (A) - 7.4 Typical ESD Protection 800 V

9.2. Size:268K vishay
sq3419aeev.pdf

SQ3419AEEVwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 AEC-Q101 qualified cRDS(on) () at VGS = -10 V 0.061 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.093 Typical ESD protection 800 VID (A) -6.9 Material categorization:Configuration Singlefor defi

9.3. Size:206K vishay
sq3410ev.pdf

SQ3410EVwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY AEC-Q101 QualifieddVDS (V) 30 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0175 Material categorization:RDS(on) () at VGS = 4.5 V 0.0213For definitions of compliance please seeID (A) 8www.vishay.com/doc?99912

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