SQ3427AEEV Todos los transistores

 

SQ3427AEEV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SQ3427AEEV
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.3 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.095 Ohm
   Paquete / Cubierta: TSOP-6
     - Selección de transistores por parámetros

 

SQ3427AEEV Datasheet (PDF)

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SQ3427AEEV

SQ3427AEEVwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 AEC-Q101 qualified cRDS(on) () at VGS = -10 V 0.095 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.135 Typical ESD protection 800 VID (A) -5.3Configuration Single Material categorization:for

 8.1. Size:235K  vishay
sq3427ev.pdf pdf_icon

SQ3427AEEV

SQ3427EVwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 AEC-Q101 qualified cRDS(on) () at VGS = -10 V 0.095 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.135 Material categorization:ID (A) -5.3for definitions of compliance please see Configuration Sing

 8.2. Size:207K  vishay
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SQ3427AEEV

SQ3427EEVwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 60DefinitionRDS(on) () at VGS = - 10 V 0.082 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.115 AEC-Q101 QualifiedcID (A) - 5.5 100 % Rg and UIS TestedConfiguration Single Typica

 9.1. Size:258K  vishay
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SQ3427AEEV

SQ3426AEEVwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 Typical ESD protection 800 V HBMRDS(on) () at VGS = 10 V 0.042 AEC-Q101 qualifiedRDS(on) () at VGS = 4.5 V 0.063 100 % Rg and UIS testedID (A) 7 Material categorization: Configuration Singlefor definit

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History: AM2336N-T1 | SMOS44N80

 

 
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History: AM2336N-T1 | SMOS44N80

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