SQ3427AEEV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SQ3427AEEV
Código: 8Y
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 5 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 5.3 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 15.3 nC
Tiempo de subida (tr): 24 nS
Conductancia de drenaje-sustrato (Cd): 90 pF
Resistencia entre drenaje y fuente RDS(on): 0.095 Ohm
Paquete / Cubierta: TSOP-6
Búsqueda de reemplazo de MOSFET SQ3427AEEV
SQ3427AEEV Datasheet (PDF)
sq3427aeev.pdf
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SQ3427AEEVwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 AEC-Q101 qualified cRDS(on) () at VGS = -10 V 0.095 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.135 Typical ESD protection 800 VID (A) -5.3Configuration Single Material categorization:for
sq3427ev.pdf
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SQ3427EVwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 AEC-Q101 qualified cRDS(on) () at VGS = -10 V 0.095 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.135 Material categorization:ID (A) -5.3for definitions of compliance please see Configuration Sing
sq3427eev.pdf
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SQ3427EEVwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 60DefinitionRDS(on) () at VGS = - 10 V 0.082 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.115 AEC-Q101 QualifiedcID (A) - 5.5 100 % Rg and UIS TestedConfiguration Single Typica
sq3426aeev.pdf
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SQ3426AEEVwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 Typical ESD protection 800 V HBMRDS(on) () at VGS = 10 V 0.042 AEC-Q101 qualifiedRDS(on) () at VGS = 4.5 V 0.063 100 % Rg and UIS testedID (A) 7 Material categorization: Configuration Singlefor definit
sq3425ev.pdf
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SQ3425EVwww.vishay.comVishay SiliconixAutomotive P-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -20 AEC-Q101 qualified cRDS(on) () at VGS = -4.5 V 0.060 100 % Rg and UIS testedRDS(on) () at VGS = -2.5 V 0.100 Material categorization:ID (A) -7.4for definitions of compliance please seeConfiguration Singlew
sq3426ev.pdf
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SQ3426EVwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 AEC-Q101 qualifiedRDS(on) () at VGS = 10 V 0.042 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.063 Material categorization: ID (A) 7for definitions of compliance please see Configuration Singlewww.vish
sq3426eev.pdf
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SQ3426EEVwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.042 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.063 Typical ESD Protection 800 VID (A) 7 AEC-Q101 QualifiedConfiguration Single 100 % Rg and U
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Liste
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