FDD5N50NZF Todos los transistores

 

FDD5N50NZF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD5N50NZF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 62.5 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 3.7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 12 nC

Resistencia drenaje-fuente RDS(on): 1.75 Ohm

Empaquetado / Estuche: TO252, DPAK

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FDD5N50NZF Datasheet (PDF)

1.1. fdd5n50nz.pdf Size:548K _fairchild_semi

FDD5N50NZF
FDD5N50NZF

November 2009 UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5Ω Features Description • RDS(on) = 1.38Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. • Low Crss ( Typ. 4pF) This advance technology has been especially

1.2. fdd5n50nzf.pdf Size:564K _fairchild_semi

FDD5N50NZF
FDD5N50NZF

November 2009 UniFET-IITM FDD5N50NZF N-Channel MOSFET 500V, 3.7A, 1.75Ω Features Description • RDS(on) = 1.47Ω ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. • Low Crss ( Typ. 4pF) This advance technology has been esp

 3.1. fdd5n50f.pdf Size:752K _fairchild_semi

FDD5N50NZF
FDD5N50NZF

December 2007 UniFETTM FDD5N50F tm N-Channel MOSFET, FRFET 500V, 3.5A, 1.55Ω Features Description • RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 1.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 11nC) stripe, DMOS technology. • Low Crss ( Typ. 5pF) This advanced technology has

3.2. fdd5n50.pdf Size:503K _fairchild_semi

FDD5N50NZF
FDD5N50NZF

December 2007 UniFETTM FDD5N50 tm N-Channel MOSFET 500V, 4A, 1.4Ω Features Description • RDS(on) = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 11nC) stripe, DMOS technology. • Low Crss ( Typ. 5pF) This advanced technology has been especiall

 3.3. fdd5n50u.pdf Size:645K _fairchild_semi

FDD5N50NZF
FDD5N50NZF

December 2007 TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0Ω Features Description • RDS(on) = 1.65Ω ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( Typ. 11nC) DOMS technology. • Low Crss ( Typ. 5pF) This advance technology h

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